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步进电机控制器L6480上的异常过电流检测行为。在初始化之后，给出硬停止命令来保持步进电机，这似乎工作正常，所有预期的波形出现在晶体管的栅极上。当给出128个微步的移动命令时，桥接器脱离，状态寄存器中没有错误。在硬HiZ命令和另一个硬停止命令之后，状态寄存器显示过电流故障和缺相A和B故障！我该如何克服这种情况？ 注册设置： CONFIG = 0x3880（PWM div fact = 2，PWM mul fact = 1.75，VCCVAL = 7.5，UVLOVAL = 6.3，过流检测时桥接关闭） GATECFG1 = 0x04FD（WD_EN禁用，TBOOST = 375ns，IGate = 96mA，TCC = 3750ns） GATECFG2 = 0xE2（TBLANK = 1000ns，TDT = 375ns） STEP_MODE = 0x07（128微步） OCD_TH = 0x1F（1V，最大值） KVAL_HOLD = 0x25（0.15xVs，其中Vs = 13V） KVAL_RUN = 0x52（0.33xVs，其中Vs = 13V） KVAL_ACC = 0x64（0.4xVs，其中Vs = 13V） KVAL_DEC = 0x32（0.2xVs，其中Vs = 13V） MAX_SPEED = 0x34（800步/秒） MIN_SPEED = 0x00（0步/秒） ACC = 0x89（2000步/秒^ 2） DEC = 0x89（2000步/秒^ 2） FS_SPD = 0xA0（2449步/秒） 使用的晶体管都是IRF520N（100V，9.7A，RDSon = 0.2欧姆，Qg总栅极电荷=最大25nC）。晶体管的选择集中在低栅极电荷上。 STB35NF10的使用也不太成功，因为典型的55nC总栅极电荷较高，尽管RDSon仅为0.035欧姆。 任何建议欢迎。 最好的祝福 以上来自于谷歌翻译 以下为原文 Hi Abnormal over current detection behaviour on stepper motor controller L6480. After initialization a hard stop command is given to hold the stepper motor, which seems to work just fine, all the expected waveforms appear on the gates of the transistors. When a move command of 128 micro-steps are given the bridge disengaged with no errors in the status register. After a hard HiZ command and another hard stop command the status register shows an over current fault and phase loss A and B faults! How do I proceed to overcome this situation? Register setup: CONFIG = 0x3880 (PWM div fact=2, PWM mul fact=1.75, VCCVAL=7.5,UVLOVAL=6.3,Bridge shut down on over current detection) GATECFG1 = 0x04FD (WD_EN disabled, TBOOST=375ns, IGate=96mA, TCC=3750ns) GATECFG2 = 0xE2 (TBLANK = 1000ns, TDT=375ns) STEP_MODE = 0x07 (128 microsteps) OCD_TH = 0x1F (1V, the maximum) KVAL_HOLD = 0x25 (0.15xVs where Vs=13V) KVAL_RUN =0x52 (0.33xVs where Vs=13V) KVAL_ACC = 0x64 (0.4xVs where Vs=13V) KVAL_DEC = 0x32 (0.2xVs where Vs=13V) MAX_SPEED = 0x34 (800 steps/s) MIN_SPEED = 0x00 (0 steps/s) ACC = 0x89 (2000 steps/s^2) DEC = 0x89 (2000 steps/s^2) FS_SPD = 0xA0 (2449 steps/s) The transistors used are all IRF520N (100V, 9.7A, RDSon = 0.2 ohm, Qg total gate charge = 25nC max).Choice of transistors focused on the low gate charge. STB35NF10 were also used with less success due to the higher total gate charge of 55nC typical, although the RDSon is a mere 0.035 ohm. Any advise welcome. Best regards 
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9个回答
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您对配置的一些评论：
门驱动程序配置未优化。您应该选择栅极电流和tcc，以使Igate x tcc略大于Qg为什么在7.5 V时使用VCC？建议仅用于逻辑电平MOSFEWT。你是否只有OCD和STALL失败？请检查在运行期间是否以某种方式重置（配置寄存器恢复为默认值）。 以上来自于谷歌翻译 以下为原文 Some comments on your configuration:
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你好
我将VCC改为15V。我测试了IGate和TCC的3种不同设置，Qg为25nC，所有这些设置现在给我一个UVLO错误，非常查看时会弹出OCD错误，但我无法捕获示波器上Vs或VSREG输入的浪涌。由于UVLO，原因寄存器全部复位。 当我将L6480切换到步进时钟模式时，未优化的设置保持电机没有错误，并且步进脉冲波形改变但没有电机运动。较低的设置也会在步进时钟模式下产生UVLO错误。我没有捕获任何其他错误。 有什么建议么？ 以上来自于谷歌翻译 以下为原文 Hi I changed the VCC to 15V. I tested 3 different settings for IGate and TCC for a Qg of 25nC, all of which give me now an UVLO error, very view times an OCD error pops up however, I could not capture a surge in the Vs or VSREG inputs on the oscilloscope. The registers of cause are all reset due to the UVLO. When I switch the L6480 to step clock mode, the un-optimized settings holds the motor with no error and with step pulses the waveforms change but without motor movement. The lower settings also gave an UVLO error in step clock mode. I did not capture any other error though. Any suggestions? |
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您可以在运行期间检查供应情况吗？
如果配置未经优化，L6480实现的电压模式驱动可能会产生强电流。这些强电流可能会达到您的电源极限。 以上来自于谷歌翻译 以下为原文 Can you check the supply during operation? The voltage mode driving implemented by the L6480 could cause strong current if the configuration is not optimized. These strong currents could reach the very limit for your power supply. |
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你好
我设法捕获电源线上的浪涌。最坏的情况似乎是从13vdc下降到10伏。有可能存在更快的浪涌，但无法捕获这些浪涌。 10伏仍然高于6.3伏的UVLO设置！问题是，如果这些浪涌高于UVLO负责，或者如果有超过UVLO阈值的浪涌复位控制器，控制器如何复位，这种浪涌实际触发UVLO的最小持续时间是多少？ 我进行了一些额外的测试，以确定mosfet驱动单元的行为。目的是将电荷设置为大约25nC，因为这是我的mosfets的Qg max。我发现TCC的最长时间设置为3750 nS，IGATE设置为8mA（约30nC）是唯一有效的设置。这不仅可以通过硬停止命令保持电机，而且可以在没有任何UVLO的情况下转动电机，甚至过流事件的复位！没有其他具有更高电流和更短时间的设置可以实现30nC。这是因为较高的电流设置往往会使门更容易饱和，或者可能是控制器中的驱动器？ 有没有人对这种行为有解释？ 以上来自于谷歌翻译 以下为原文 Hi I managed to capture surges on the power supply line. The worst seems to be a dip from 13vdc down to 10volts. It might be possible that even faster surges are present but couldn’t capture those. The 10 volts is still above the UVLO setting of 6.3 volts! The question is then how did the controller reset if these surges above the UVLO was responsible or if there were surges that dipped through the UVLO threshold that reset the controller, what is the minimum time duration for such a surge to actually trigger an UVLO? I ran some additional test to figure out the behaviour of the mosfet drive unit. The aim was to set the charge to about 25nC since this is the Qg max of my mosfets. I found that the longest time setting on TCC at 3750 nS and 8mA for IGATE (gives about 30nC) is the only setting that works. Not only can this hold the motor with a hard stop command but can turn the motor too without any UVLO, reset of even overcurrent event! No other setting with a higher current and shorter time that achieve 30nC works. Is this because higher current settings tend to saturate the gates easier or perhaps the drivers in the controller? Does anyone have an explanation for this behaviour? |
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你好
我使用l6480驱动双极步进电机。一切都很好电机运行良好，但过电流检测功能是不可预测的工作。我已被禁用此功能，然后电机工作正常，并且存在关于电流阈值的计算的混淆。在'AN4355应用笔记'中写道，'IOCDth = VOCDth×Rds（ON）'与l6480数据表的说法相矛盾，后者说'L6480测量每个半桥的负载电流，检测VDS电压所有功率MOSFET（图12）。当任何VDS电压超过设定的阈值时'。我想了解这个OCD功能。 以上来自于谷歌翻译 以下为原文 hello i am driving bipolar stepper motor using l6480. everything is fine motor is running excellent but the over current detection feature is working unpredictably. i have been disabled this feature then motor is working good, and there is confusion about the calculations of current threshold. in 'AN4355 Application note' it is written that 'IOCDth = VOCDth × Rds(ON)' which is contradicting the statement of datasheet of l6480, which says ' The L6480 measures the load current of each half-bridge sensing the VDS voltage of all the Power MOSFETs (Figure 12). When any of the VDS voltages rise over the programmed threshold'. i want to understand this OCD feature. |
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最终清除了这种异常过电流检测行为。具有不良硬件设置的未优化驱动器配置将导致UVLO和OCD错误，并且没有特定顺序或以任何给定的发生率，因此可以说是随机行为。
以上来自于谷歌翻译 以下为原文 This abnormal over current detection behaviour is finally cleared. An unoptimized drive configuration with an imporper hardware setup will cause UVLO and OCD errors and in no particular order or at any given rate of occurance, hence a random behaviour so to speak. |
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嗨，
这句话是正确的：'L6480测量每个半桥的负载电流，检测所有功率MOSFET的VDS电压（图12）。当任何VDS电压超过设定的阈值时'。如果超过VOCDth设置，这种Vds测量将触发过流。现在将此值设置为最大值以排除所有错误并很好地掌握此控制器的工作方式，然后将其降低到需要的值。还要确保栅极的总电荷（Qg）低于50nC，越低越好。 VOCDth设置是晶体管上Vds下降的设置，这意味着VOCDth = IOCDth x Rdson。确保您的桥接驱动器已经过优化，Igate x tcc略大于Qg。这意味着对于Igate的不同电流选择，可以使用不同的tcc值，选择最长时间的最低电流。如果您构建自己的电路板（自己的PCB布局），这对于栅极驱动器的轨道长度和厚度非常重要，这将非常有用。晶体管应尽可能靠近L6480控制器。如果可行，请根据需要增加电流以降低驱动时间。更长和更薄的轨道具有更高的电抗，并且更高的电流驱动将导致在轨道的长度上产生更高的电压降，从而导致mosfet的更慢的导通。 这种错误的驱动器设置和不正确的硬件会导致晶体管的开关速度变慢，因此UVLO条件现在也会复位控制器和所有原因寄存器，这意味着状态寄存器将被重置为启动时的值。 以上来自于谷歌翻译 以下为原文 Hi, This statement is true: ' The L6480 measures the load current of each half-bridge sensing the VDS voltage of all the Power MOSFETs (Figure 12). When any of the VDS voltages rise over the programmed threshold'. This measurement of Vds will trigger an overcurrent if exceeding the VOCDth setting. Set this value to a maximum for now to sort out all errors and to get a good grip on how this controller works, then lower it later to what ever value is needed. Also make sure the total charge of the gate (Qg) is below 50nC, the lower the better. The VOCDth setting is that of the Vds drop over the transistor, which means that VOCDth = IOCDth x Rdson. Make sure your bridge drive is optimized, Igate x tcc slightly greater than Qg. This means that for the different current selections for Igate different tcc values is possible, select the lowest current for the longest time. This is helpfull if you build your own board (own PCB layout), the track length and thickness for the gate drives is very important. The transistors should be as close to the L6480 controller as possible. If it works, increase you current to lower the drive time as needed. Longer and thinner tracks have a higher reactance and a higher current drive will of cause generate a higher voltage drop over the lenght of the track and thus a slower turn on of the mosfets. This wrong drive setup and improper hardware produces a slow switchon of the transistors, hence the UVLO condition that now also resets the controller and all the registers of cause, that means the status register will be reset to the values at startup. |
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谢谢你的好消息，
我正在设计自己的pcb，所以你能告诉我任何有其Igate和Tcc条件的mosfet。 以上来自于谷歌翻译 以下为原文 thank you phlip nice information, I am designing my own pcb so can u suggest me any mosfet with its Igate and Tcc conditions. |
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嗨，
我使用IRF520N mosfet，它的最大Qg为25nC。你可以使用STD25NF10甚至STB35NF10，这些的Qg是典型的55nC，有点难以驾驶...... 从最长tcc的Igate电流8mA开始，使用此设置，直到您完成所有其他适合您的设置。这似乎很奇怪，但这样可以最大限度地减少硬件问题，例如不正确的轨道然后增加电流并逐步降低时间设置（当前选择是固定的步骤），直到您有正确的设置或任何设置适合您。请记住，Igate x tcc必须大于你的mosfet Qg。 以上来自于谷歌翻译 以下为原文 Hi, I use the IRF520N mosfet, it has a maximum Qg of 25nC. You can use the STD25NF10 or even STB35NF10, the Qg of these are typical 55nC, a little bit more difficult to drive... Start with an Igate current of 8mA with the longest tcc possible, work with this setting until you fugre out all the other settings that works for you. It seems odd, but this way you minimize hardware issues like improper tracks. Then increase the current and lower the time setting in steps (the current selections is fixed steps) until you have a proper setup or what ever setting works for you. Remember that Igate x tcc must be greater than that of your mosfet Qg. |
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