仿真EEPROM组件中的2个严重错误

只是一个快速为大家。（你在听柏树吗？）
在仿真EEPROM组件中有2个严重错误，使得它不适合在任何应用程序中使用。
它与计算闪存数组内部地址的方式有关。用户没有对这些控件的控制，只能通过编辑生成的源或修改提供的库源来完成工作。
1。如果您定义的常量结构、变量或数组恰好位于Flash AARY-0之外，那么写入它会损坏其他区域的Flash。数据将被保存到错误的Flash数组中，并且可以覆盖代码或配置数据。
2。如果您在Flash中存储的数据恰好占用了Flash数组的最后一行的一部分（再次对此没有控制），那么最后一行将被写入错误的Flash数组中，这可能损坏代码或配置数据。
我已经为这两个问题筹集到了塞浦路斯的票。我已经给了他们示例代码来演示这些问题，并且我确信一个修复即将到来，但是直到那时你才可以使用仿真EEPROM组件。
如果您当前使用此组件而不遭受任何不良影响，那么它只是偶然的——对代码的任何部分进行小的更改可以将您的Flash数据推送到受影响的区域之一，并导致代码以奇怪的方式运行。
对于PSoC 5或PSoC 5LP，这里有一个工作：
在代码被编译并编译之后，找到EMMEEPROMLWORTER（）方法的生成源。它的名字将取决于你在模式图中命名组件的名称，例如，如果你的组件被命名为“Flash StaveT”，那么该方法将是Flash SaveWrWrad（）
然后在文件中的大约121行编辑四行，并用以下方法替换它们：
行数＝DATAAdv/CyFLASH SIEZOFFROW；
数组编号＝DATAAdv/CyFLASH SIEZOFF数组；
RoopOffice＝DATAAdv-（CythFLASH SIEZOFFROWOR*ROW号）；
RealSrCd=＝0U；
然后在前面四点之后立即添加这条线：
行数和；
这将允许对Flash中的任何地址正确地计算行数和数组编号。
我希望这有帮助。



     以下为原文
   Just a quick heads up for everyone. (Are you listening Cypress?)
    There are 2 serious bugs in the Emulated EEPROM component which make it not suitable for use in any application.
    It has to do with the way the internal addresses within the flash arrays are calculated. The user has no control over these and a work around is only possible by editing the generated-source or modifying the supplied library source.
    1. If the constant structure, variable or array you have defined just happens to live outside of flash array-0 then writing to it will corrupt other areas of flash. The data will get saved to the wrong flash array and could overwrite code, or configuration data.
    2. If the data you are storing in flash just happens to occupy part of the last row of a flash array (again you have no control over this) then the last row will be written to the wrong flash array, which could damage code or configuration data.
     
    I have raised tickets with Cypress for both of these issues. I have given them sample code which demonstrates the issues and I am sure a fix will be forth coming, but until then you canot use the Emulated EEPROM component.
    If you are currently using this component and not suffering any bad effects, then it is only by chance - a small change to ANY part of your code could push your flash data into one of the affected areas and cause your code to behave in strange ways.
    For those on PSoC 5 or PSoC 5LP here is a work around:
    After you code is built and compiled, find the generated source for the Em_EEPROM_Write() method. [Its name will depend on what you names the component in the schematic, for example if your component is named 'FlashSave' then the method will be FlashSave_Write() ]
    Then edit the four lines at approximately line 121 in the file and replace them with this:
     
            rowNumber  = dataAddress / CY_FLASH_SIZEOF_ROW;
            arrayNumber = dataAddress / CY_FLASH_SIZEOF_ARRAY;
            rowOffset  = dataAddress - (CY_FLASH_SIZEOF_ROW * rowNumber);
            readSrcIndex = 0u;
    And then add this line immediately following the previous four:
     rowNumber &= 0x000000ff;
     
    This will allow the rowNumber and arrayNumber to be calculated properly for any address in flash.
     
    I hope this helps.