串行EEPROM字节和页写入耐久性

你好 ，
我们目前正在开发一个使用EEPROM存储零星数据的项目。 eeprom是一款24AA512，内存为512kbits，来自Microchip。
我们使用它来存储来自我们应用程序的数据记录数据。问题是我们有时还需要只存储3-4个字节的数据，并且这个eeprom执行相同的页面或字节写操作，这意味着即使我选择只在页面区域中写入一个字节，也会刷新整页128字节，每次都减少一个周期的整页耐力。这可能会导致我们的应用程序出现问题。
有没有人可以告诉我ST的芯片是否也是如此，例如M24512或M95512？每个字节写入是否意味着必须刷新整个页面？这一点似乎没有在数据表中明确定义......
提前感谢您的帮助。
埃里克

#endurance＃byte-write＃page-write #eeprom



以下为原文




Hi There ,
We are currently working on a project using an EEPROM to store sporadic data. The eeprom is a 24AA512 with 512kbits memory, from Microchip.
We use it to store datalogging data from our application. The problem is that we sometimes also need to store only 3-4 bytes data and that this eeprom does page or byte write operations identically, meanning that a full page of 128bytes is refreshed even if I choose to write only one byte in a page area, reducing the endurance of the full page of one cycle everytime. This might cause a problem in our application.
Could anybody tell me if that is the case too in chips of ST , as the M24512 or M95512 for example? does every single byte write means that the full page has to be refreshed? That point doesn't seem to be clearly defined in the datasheet...
thanks in advance for any help.
Eric

#endurance #byte-write #page-write #eeprom