SPC570S EEPROM仿真无法写入数据

你好，
我正在使用SPC570S-DISP发现套件和SPC5Studio v5.6，我正在尝试使用EEPROM模拟以便为我的应用程序保存一些数据。
我没有使用从ST网站下载的闪存驱动程序，因此我正在尝试按照RM0349参考手册中的指示编写自己的代码。
我尝试做的是：
1）仅擦除高内存中的4个8KB扇区（用于数据存储器）
2）在数据存储器的开头写入0xAA55AA55（0x00800000）
擦除操作似乎成功完成（在操作之后，MCR寄存器中的PEG位等于1），但写操作不起作用（PEG = 0）。
这是我的代码：
#define FLASH_TEST_ADDR_0（uint32_t *）（0x00800000UL）
uint32_t temp;

uint32_t status_erase;

uint32_t status_write;
uint32_t *地址;
//擦除

FLASH_0.LOCK1.R = 0xFFFFFFF0; //解锁用于EEPROM仿真的4个8KB高存储器扇区

FLASH_0.MCR.R = 0x00000004; //激活ERASE位

FLASH_0.SEL0.R = 0x00000000;

FLASH_0.SEL1.R = 0x0000000F; //仅选择4个8KB高内存扇区进行擦除

FLASH_0.SEL2.R = 0x00000000;

FLASH_0.MCR.R = 0x00000005; //激活高压位以便开始擦除

做{

temp = FLASH_0.MCR.R;

} while（！（temp＆amp; 0x00000400））; //等待操作完成

status_erase = FLASH_0.MCR.R＆amp; 0x00000200; //检查操作结果并将其存储在status_erase变量中

FLASH_0.MCR.R = 0x00000004; //高电压位已禁用

FLASH_0.MCR.R = 0x00000000; // ERASE位已停用
//此时status_erase值等于0x00000200，表示操作已成功完成
//写

address = FLASH_TEST_ADDR_0; //将地址指针初始化为模拟EEPROM的第一个地址

FLASH_0.MCR.R = 0x00000010; //激活PGM位

*地址= 0xAA55AA55; //设置要写入的数据值

FLASH_0.MCR.R = 0x00000011; //激活高压位以开始编程

做{

temp = FLASH_0.MCR.R;

} while（！（temp＆amp; 0x00000400））; //等待操作完成

status_write = FLASH_0.MCR.R＆amp; 0x00000200; //检查操作结果并将其存储在status_write变量中

FLASH_0.MCR.R = 0x00000010; //高电压位已禁用

FLASH_0.MCR.R = 0x00000000; // PGM位已禁用
//此时status_write值等于0x00000000，表示操作出错
你能帮我找一下怎么回事？可能这是一个愚蠢的问题，因为我对这个微控制器缺乏经验，我刚才正在探索。
提前致谢，
亲切的问候。
丹尼尔



以下为原文




Hello,
I'm working with SPC570S-DISP discovery kit and SPC5Studio v5.6, and I'm trying to use EEPROM emulation in order to save some data for my application.
I'm not using the flash drivers downloadable from ST site, so I'm trying to write my own code following the indications in RM0349 reference manual.
What I try to do is:
1) erase only the 4 8KB sectors placed in high memory (used for data memory)
2) write 0xAA55AA55 at the start of data memory (0x00800000)
The erase operation seems to be completed successfully (after operation, PEG bit in MCR register equals to 1), but write operation doesn't work (PEG = 0).
Here is my code:

#define FLASH_TEST_ADDR_0 ( uint32_t *) (0x00800000UL)

uint32_t temp;

uint32_t status_erase;

uint32_t status_write;

uint32_t *address;

// erase

FLASH_0.LOCK1.R = 0xFFFFFFF0;  //unlock 4 8KB high memory sectors used for EEPROM emulation

FLASH_0.MCR.R = 0x00000004;    //activate ERASE bit

FLASH_0.SEL0.R = 0x00000000;

FLASH_0.SEL1.R = 0x0000000F;   //select only 4 8KB high memory sectors for erasing

FLASH_0.SEL2.R = 0x00000000;

FLASH_0.MCR.R = 0x00000005;    //activate High Voltage bit in order to start erasing

do {

  temp = FLASH_0.MCR.R;

} while ( !(temp & 0x00000400) ); //wait for operation to be completed

status_erase = FLASH_0.MCR.R & 0x00000200; //check for operation result and store it in status_erase variable

FLASH_0.MCR.R = 0x00000004;    //High Voltage bit deactivated

FLASH_0.MCR.R = 0x00000000;    //ERASE bit deactivated

//status_erase value at this point equals to 0x00000200, that means that the operation has been succesfully completed

//write

address = FLASH_TEST_ADDR_0;   //initialize address pointer to first address of emulated EEPROM     

FLASH_0.MCR.R = 0x00000010;    //activate PGM bit

*address = 0xAA55AA55;         //set the data value to be written

FLASH_0.MCR.R = 0x00000011;    //activate High Voltage bit in order to start programming

do {

  temp = FLASH_0.MCR.R;

} while ( !(temp & 0x00000400) ); //wait for operation to be completed

status_write = FLASH_0.MCR.R & 0x00000200; //check for operation result and store it in status_write variable

FLASH_0.MCR.R = 0x00000010;    //High Voltage bit deactivated

FLASH_0.MCR.R = 0x00000000;    //PGM bit deactivated

//status_write value at this point equals to 0x00000000, that means that the operation went wrong

Could you please help me to find what is wrong? Probably it's a stupid issue due to my inexperience about this microcontroller that I'm exploring just now.

Thanks in advance,
kind regards.

Daniel