[问答]

从STM32H7中的外部SDRAM读取8位数组会给出损坏的数据怎么解决？

问答对人有帮助，内容完整，我也想知道答案 0 我们正在使用具有 16 MByte SDRAM 的 STM32H745I-DISCO。我们可以读写 32 位和 16 位值，但是当我们尝试读取 8 字节数组时，我们得到损坏的数据并且不知道如何修复它。 // -------------------------------- TEST CODE // t1 struct is placed in external memory (code works when put in RAM_D2 but no external ram void SDRAM_Test8() { int result = 1, i; uint32_t adressStart = 0; for(adressStart; adressStart < (810241024-(BUFFER_SIZE84)); adressStart += BUFFER_SIZE8) { / Fill the buffer to write / Fill_Buffer8(t1.aTxBuffer8, BUFFER_SIZE8, 0x00); / Fill the Read buffer / memset(t1.aRxBuffer8,0,BUFFER_SIZE8); for (i = 0; i < BUFFER_SIZE8; i++) { (__IO uint8_t) (SDRAM_BANK_ADDR + i + adressStart) = t1.aTxBuffer8; } for (i = 0; i < BUFFER_SIZE8; i++)* { t1.aRxBuffer8 = (__IO uint8_t) (SDRAM_BANK_ADDR + i + adressStart); } for (i = 0; i < BUFFER_SIZE8; i++) { if (t1.aRxBuffer8 != t1.aTxBuffer8) { result = 0; break; } } } void MPU_Config(void) { MPU_Region_InitTypeDef MPU_InitStruct; / Disable the MPU / HAL_MPU_Disable(); / Configure the MPU as Strongly ordered for not defined regions / MPU_InitStruct.Enable = MPU_REGION_ENABLE; MPU_InitStruct.BaseAddress = 0x00; MPU_InitStruct.Size = MPU_REGION_SIZE_4GB; MPU_InitStruct.AccessPermission = MPU_REGION_NO_ACCESS; MPU_InitStruct.IsBufferable = MPU_ACCESS_NOT_BUFFERABLE; MPU_InitStruct.IsCacheable = MPU_ACCESS_NOT_CACHEABLE; MPU_InitStruct.IsShareable = MPU_ACCESS_SHAREABLE; MPU_InitStruct.Number = MPU_REGION_NUMBER0; MPU_InitStruct.TypeExtField = MPU_TEX_LEVEL0; MPU_InitStruct.SubRegionDisable = 0x87; MPU_InitStruct.DisableExec = MPU_INSTRUCtiON_ACCESS_DISABLE; HAL_MPU_ConfigRegion(&MPU_InitStruct); / Configure the MPU attributes as WT for SDRAM / MPU_InitStruct.Enable = MPU_REGION_ENABLE; MPU_InitStruct.BaseAddress = SDRAM_BANK_ADDR; MPU_InitStruct.Size = MPU_REGION_SIZE_16MB; MPU_InitStruct.AccessPermission = MPU_REGION_FULL_ACCESS; MPU_InitStruct.IsBufferable = MPU_ACCESS_NOT_BUFFERABLE; MPU_InitStruct.IsCacheable = MPU_ACCESS_NOT_CACHEABLE; MPU_InitStruct.IsShareable = MPU_ACCESS_NOT_SHAREABLE; MPU_InitStruct.Number = MPU_REGION_NUMBER1; MPU_InitStruct.TypeExtField = MPU_TEX_LEVEL0; MPU_InitStruct.SubRegionDisable = 0x00; MPU_InitStruct.DisableExec = MPU_INSTRUCTION_ACCESS_ENABLE; HAL_MPU_ConfigRegion(&MPU_InitStruct); / Enable the MPU / HAL_MPU_Enable(MPU_PRIVILEGED_DEFAULT); / Enable the CPU Cache / CPU_CACHE_Enable(); } void SDRAM_Init() { /##-1- Configure the SDRAM device #########################################/ / SDRAM device configuration / hsdram.Instance = FMC_SDRAM_DEVICE; / Timing configuration / SDRAM_Timing.LoadToActiveDelay = 2; SDRAM_Timing.ExitSelfRefreshDelay = 7; SDRAM_Timing.SelfRefreshTime = 4; SDRAM_Timing.RowCycleDelay = 7; SDRAM_Timing.WriteRecoveryTime = 2; SDRAM_Timing.RPDelay = 2; SDRAM_Timing.RCDDelay = 2; hsdram.Init.SDBank = FMC_SDRAM_BANK2; hsdram.Init.ColumnBitsNumber = FMC_SDRAM_COLUMN_BITS_NUM_8; hsdram.Init.RowBitsNumber = FMC_SDRAM_ROW_BITS_NUM_12; hsdram.Init.MemoryDataWidth = SDRAM_MEMORY_WIDTH; hsdram.Init.InternalBankNumber = FMC_SDRAM_INTERN_BANKS_NUM_4; hsdram.Init.CASLatency = FMC_SDRAM_CAS_LATENCY_3; hsdram.Init.WriteProtection = FMC_SDRAM_WRITE_PROTECTION_DISABLE; hsdram.Init.SDClockPeriod = SDCLOCK_PERIOD; hsdram.Init.ReadBurst = FMC_SDRAM_RBURST_ENABLE; hsdram.Init.ReadPipeDelay = FMC_SDRAM_RPIPE_DELAY_2; / Initialize the SDRAM controller / if(HAL_SDRAM_Init(&hsdram, &SDRAM_Timing) != HAL_OK) { / Initialization Error / Error_Handler(); } / Program the SDRAM external device / SDRAM_Initialization_Sequence(&hsdram, &command); printf("Initiating SDRAM rn"); /##-2- SDRAM memory read/write access #####################################/ } /** * @brief Perform the SDRAM exernal memory inialization sequence * @param hsdram: SDRAM handle * @param Command: Pointer to SDRAM command structure * @retval None / static void SDRAM_Initialization_Sequence(SDRAM_HandleTypeDef hsdram, FMC_SDRAM_CommandTypeDef Command)* { __IO uint32_t tmpmrd =0; / Step 1: Configure a clock configuration enable command / Command->CommandMode = FMC_SDRAM_CMD_CLK_ENABLE; Command->CommandTarget = FMC_SDRAM_CMD_TARGET_BANK2;; Command->AutoRefreshNumber = 1; Command->ModeRegisterDefinition = 0; / Send the command / HAL_SDRAM_SendCommand(hsdram, Command, SDRAM_TIMEOUT); / Step 2: Insert 100 us minimum delay / / Inserted delay is equal to 1 ms due to systick time base unit (ms) / HAL_Delay(1); / Step 3: Configure a PALL (precharge all) command / Command->CommandMode = FMC_SDRAM_CMD_PALL; Command->CommandTarget = FMC_SDRAM_CMD_TARGET_BANK2; Command->AutoRefreshNumber = 1; Command->ModeRegisterDefinition = 0; / Send the command / HAL_SDRAM_SendCommand(hsdram, Command, SDRAM_TIMEOUT); / Step 4 : Configure a Auto-Refresh command / Command->CommandMode = FMC_SDRAM_CMD_AUTOREFRESH_MODE; Command->CommandTarget = FMC_SDRAM_CMD_TARGET_BANK2; Command->AutoRefreshNumber = 8; Command->ModeRegisterDefinition = 0; / Send the command / HAL_SDRAM_SendCommand(hsdram, Command, SDRAM_TIMEOUT); / Step 5: Program the external memory mode register / tmpmrd = (uint32_t)SDRAM_MODEREG_BURST_LENGTH_1 \| SDRAM_MODEREG_BURST_TYPE_SEQUENTIAL \| SDRAM_MODEREG_CAS_LATENCY_3 \| SDRAM_MODEREG_OPERATING_MODE_STANDARD \| SDRAM_MODEREG_WRITEBURST_MODE_SINGLE; Command->CommandMode = FMC_SDRAM_CMD_LOAD_MODE; Command->CommandTarget = FMC_SDRAM_CMD_TARGET_BANK2; Command->AutoRefreshNumber = 1; Command->ModeRegisterDefinition = tmpmrd; / Send the command / HAL_SDRAM_SendCommand(hsdram, Command, SDRAM_TIMEOUT); / Step 6: Set the refresh rate counter / / Set the device refresh rate / HAL_SDRAM_ProgramRefreshRate(hsdram, REFRESH_COUNT); } 0
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