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亲爱的先生们,我正在试图解决一个电容键盘上的问题,这很奇怪。
有时电容键盘被卡住,不再工作,只是重新编程的CY8C21434 MCU解决了电容键盘的块。我们得到的块只是在主电源上做一些电压骤降。 在230V中断之后的不同板上,微控制器的闪存完全归零(每一个字节为0x00),并且在一些罕见的情况下,Flash MEM刚刚损坏(校验和不同于HEX)。 在固件中没有对Flash进行写入。 在第一个固件中,没有看门狗,也没有LVD启用,而且CPUH时钟设置为工作@ SysCLK/1,但是电源电压为3.3V,这是不允许的(数据表页19/50),因为振荡器工作在有效的操作区域之外(是的,CPU在大多数情况下工作)。也在VOR之外。 使用WDG的新FW,启用LVD和SysCLK/4(现在在VoR中工作)似乎都正常工作,没有块。 现在,如果我可以接受一个闪光灯的腐败(在董事会附近有一个电抗器),我不能解释HO能把所有的闪光灯都擦掉。 有人能告诉我MCU是如何被完全擦除的吗? 最好的问候和许多感谢将帮助任何人 以上来自于百度翻译 以下为原文 Dear Sirs, I'm trying to solve a problem on a capacitive keyboard that is quite odd. Sometimes the capacitive keyboard is stuck and doesn't works no more; just a re-programmation of the mcu CY8C21434 solves the block of the capacitive keyboard. We obtain the block just doing some voltage dips on the main supply. On different boards after 230V interruption the flash of the microcontroller is completely zeroed (every single byte is 0x00) and in some rare cases the flash mem is just corrupted (checksum different from hex). No writing to flash are done in the firmware. In the first firmware there was no watchdog and no LVD enabled moreover there was the CPU_Clock setted to work @ SYSCLK/1 but the supply voltage was 3.3V and this is not allowed (datasheet page 19/50) because the oscillator operates outside the valid operation region (yes the cpu in most cases works also outside VOR). With a new FW with WDG, LVD enabled and SYSCLK/4 (so now working inside the VOR) all seems to work correctly and there are no blocks. Now If i can accept a flash corruption (there is acompressor near the board) I can't explain ho can all the flash to be erased. Can someone tell me how the mcu can be completely erased Best regards and many thanx to anyone will help |
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26个回答
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你好,
刚才我也经历了同样的事情。我的芯片不再工作了。我重新编程,它又开始工作了。正如MAtusel在0x00的某个时候说的,有时芯片有一个损坏的校验和。 经过一番调查,我发现我的问题是由于ESD在我的董事会中处理不当造成的。 以上来自于百度翻译 以下为原文 Hi, The exact same thing happened to me a while ago. My chip was just no longer working. I reprogrammed it and it start working again. As MAtusel said sometime with 0x00 and sometimes the chip having a corrupted checksum. After some investigation, I discorvered taht my problem was caused by ESD poorly handle in my board. |
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您好,即使我设置写保护我碰巧有块的Flash删除(0x00)。目前,我正在尝试一个外部复位芯片,看看我是否可以消除闪存损坏的问题。当做。
以上来自于百度翻译 以下为原文 Hello to all, even if I set the write protection I happened to have blocks of flash deleted (0x00). At the moment I'm trying an external reset chip and see if I can eliminare the problem of flash corrupted. Regards. |
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我在阅读Eric的帖子时已经松了一口气,但我仍然怀疑我所创建的新FW能解决我的问题(看门狗、LVD和SysCLK/4实现了,现在电路板能承受电压下降),所以我仍在等待其他人的帮助。
如果它是有用的,这里附加的是当闪速故障发生时的供电电压形状。 拉伸-亚胺-氮偶氮苯 332.4 K 以上来自于百度翻译 以下为原文 I'm partially relieved in reading EricS' post but I'm still doubtful that the new fw I have created can solve al my problem (watchdog, lvd and sysclk/4 implemented and now the board survive to voltage dips) so I'm still waiting for other people to help. If it can be useful, here attached there is the supply voltage shape when a flash fault occur. |
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我很好奇。这个问题得到解决了吗?我看到类似的问题在退货产品。
以上来自于百度翻译 以下为原文 I am curious. Was this issue ever resolved? I am seeing a similar issue in returned products. |
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也许我在这里***,但我仍然挂在一个短暂的导致所有
闪存要擦除。低级别的SROM函数可以擦除块,但阻止 必须提供地址。所以这段过渡期必须是一系列的混乱。 对于提供子调用来加载块地址的调用,然后擦除。 可以删除所有的调用似乎只是通过外部程序员。从技术 手动- 3.1.2.7 EraseALL函数 EraseALL函数执行一系列步骤,破坏闪存银行中的用户数据,并将每个闪存库中的保护块重置为全部零(未经预处理状态)。此函数只能由外部程序员执行。如果EraseAll从代码中执行,M8C将停止,而不接触闪光灯或保护。 程序员的读取后退函数有bug吗? 我对Idd的一个完全被抹去的部分的问题是思想 一个瞬变大到足以擦除所有的闪存,那么可能是大量的芯片。 短路将被创建,这将在电源电流中得到恢复。的 当然,一个瞬间可以冲洗闪光灯感放大器,使它看起来像闪光灯。 被擦除后,在已擦除的部分上进行回读可能是有益的。 编程结束后。虽然人们可能认为感官放大器是工具 编程和读取。 问候,Dana。 以上来自于百度翻译 以下为原文 Maybe I am getting anal here, but I am still hung up on a transient causing all FLASH to be erased. The low level SROM functions can erase blocks, but block address has to be provided. So the transient woulk have to be capble of a series of calls providing the sub calls to load a block address then erase.The only function call that could erase all seems to be only via an external programmer. From the tech manual - 3.1.2.7 EraseAll Function The EraseAll function performs a series of steps that destroys the user data in the Flash banks and resets the protection block in each Flash bank to all zeros (the unpro- tected state). This function may only be executed by an external programmer. If EraseAll is executed from code, the M8C will HALT without touching the Flash or protections. Is it possible the read back function in programmer has a bug ? The question I had about Idd of a fully erased part, is the thought if a transient was large enough to erase all flash, then probably a lot of onchip shorts would be created, which would be relfected in power supply current. Of course a transient could hose the flash sense amps, and make it look like flash was erased, on a part that has been erased might be instructive to do a readback right after programming. Although one might think sense amp was instrumnetal in both programming and read. Regards, Dana. |
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这个线程太老了,考虑发布一个案例,然后更新这个
为社区服务。在这种情况下链接到这个线程。 提交一个技术案例 CyPress网站 “支持” “技术支持” “创建一个MyCase'” 问候,Dana 以上来自于百度翻译 以下为原文 This thread is so old, consider posting a CASE, and then update this thread for the community. In the CASE post a link to this thread. To file a tech case - www.cypress.com “Support” “Technical Support” “Create a MyCase” Regards, Dana |
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@ Dana
故障板具有接近于工作板8Ma的CyPress附近的2550UA的VDD电流消耗。 故障后,我采取了董事会,我删除铁素体是串联在轨道到VDD,我测量了电流消耗与福禄克185万用表,然后我恢复铁氧体,我检查了校验和为0x000(闪存擦除情况)。 以上来自于百度翻译 以下为原文 @Dana A fault board has VDD current consumption of cypress near 2750uA against the 8mA of a working board. After the fault i took the board, I removed the ferrite that is in series in the track to vdd and I measured the current consumption with a fluke 185 multimeter, then I restored the ferrite and I checked the checksum that was 0x0000 (flash erased case). |
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