怎么在PIC18F上读取，擦除和写入用户ID空间

所以我知道位置200000到200007是ID位置，每个位置只有4位宽。我知道在我的源代码中使用IDOLC擦除这些位置，但是如何在运行时擦除这些位置呢？我希望周期性地动态地改变这些位置。我使用的方法是首先擦除0x20000行，然后将My3字节写入这些位置，每次一个字节（占用6个位置）。但是，它损坏了我的引导代码，或者因为我的引导程序开始奇怪。例如，A（x＝0；x& lt；50；x++）{dodo}}在调试器中显示，x虽然递增很好，但却超过50。所以事情搞砸了。如果我不给用户ID位置写，for循环是按设计的那样工作的。有人有例子，至少在最新的情况下，如何删除用户ID空间“适当”的方式吗？它擦除64个字节开始在0x20 000或只有8个位置？静态空隙EraseUsRID（UtiT32×T ADDR）{UIT88T GiBITValue= ItCnBITS.GIE；//保存中断启用TBLPTRU＝（UIT88T）（（ADDR & GT；16）和0xFF）；TBLPTRH＝（UIT88T）（（ADDR & Gt；8）和0xFF）；TBLPTRL＝（UIT88T）（ADDR和0xFF）；ECON1BITS＝1；ECON1BITE我的擦除功能：PGD＝1；ECON1BIT。CFGS＝0；ECON1BIT。WRN＝1；ItCONTITES。GEE＝0；//禁用中断ECON2= 0x55；EECON2= 0xAA；EECON1BITS＝1；//擦除像风一样！IGCONBITI.GIE比特值；//恢复中断启用ECON1BITS＝0；//禁用写入内存；静态空隙写入器ID（UINT8*T*Flash WBUFPTR）{INTI；UINT8YT GiBIT值＝INTCONBITS。GIE；//保存中断使能TBLPTRU＝（UINT8YT）0x20；TBLPTRH＝（UINT8YT）0；TBLPTRL＝（UINT8YT）0；/写入3个字节，使用6个LOC单元（每个1个字节）。AT=（Flash WrBFPTR（0）& 0x0f）；ASM（TBLWT*+）；TablAT＝（Flash WrBfpTr[ 1 ] & gt；4）；ASM（TBLWTTR（1）& 0x0f）；ASM（“TBLWT*+”）；TablAT＝（Flash WrBufPTR[2）& gt；4）；ASM（TBLWT*+）；TablAT＝（FllWrBu）TablAT＝（Flash WrBufpTR〔0〕& gt；4）；ASM（“TBLWT*+”）；〔2〕和（0x0f）；TBLPTRU＝（UIT88T）0x20；TBLPTRH＝（UIT88T）0；ECON1TBIT= EPEGD＝1；EECON1BITS＝0；ECON1BITS＝1；ICONTITES。GIE＝0；//禁用中断ECON2= 0x55；EECON2= 0xAA；EECON1BITS。WR＝1；/写得像风一样！FPTRGie= GiBIT值；//Read中断启用ECON1BITS＝0；/ /禁用写入到内存}



      以下为原文

    So I understand locations 200000 to 200007 are ID locations and are only 4 bits wide per location.  I know to erase these locations using IDLOC in my source code but how do I erase these locations at run time?   I want to dynamically change these locations periodically.

An approach I used was to first erase the row at 0x200000, then write my 3 bytes to these locations, a nibble at a time [taking up 6 locations].  This worked however it damaged my boot code or something because my bootloader started acting weird.  For example, a for(x = 0; x < 50; x++) {do something} showed in the debugger that X, although incrementing fine, went WAY past 50.. so something got messed up.  If I don't write to the User Id location, the for-loop works as designed.

Does anyone have examples of, at the very VERY least, how to erase User ID space the "proper" way?  Does it erase 64-bytes starting at 0x200000 or only the 8 locations?

My erase function:

static void eraseUserID(uint32_t addr)
{
    uint8_t GIEBitValue = INTCONbits.GIE;     // Save interrupt enable

    TBLPTRU = (uint8_t) ((addr >> 16) & 0xff);
    TBLPTRH = (uint8_t) ((addr >> 8) & 0xff);
    TBLPTRL = (uint8_t) (addr & 0xff);   
   
    EECON1bits.FREE = 1;
   
    EECON1bits.EEPGD = 1;
    EECON1bits.CFGS = 0;
    EECON1bits.WREN = 1;
   
    INTCONbits.GIE = 0; // Disable interrupts
    EECON2 = 0x55;
    EECON2 = 0xAA;
    EECON1bits.WR = 1;  // Erase like the wind!
    INTCONbits.GIE = GIEBitValue;   // Restore interrupt enable
    EECON1bits.WREN = 0;    // Disable writes to memory   
}

static void writeUserID(uint8_t *flashWrBufPtr)
{
    int i;
    uint8_t GIEBitValue = INTCONbits.GIE;     // Save interrupt enable


    TBLPTRU = (uint8_t) 0x20;
    TBLPTRH = (uint8_t) 0;
    TBLPTRL = (uint8_t) 0;  
        
    // Write 3 bytes which uses 6 LOC cells (1 nibble each).

    TABLAT = (flashWrBufPtr[0] >> 4);
    asm("TBLWT*+");
    TABLAT = (flashWrBufPtr[0] & 0x0f);
    asm("TBLWT*+");
    TABLAT = (flashWrBufPtr[1] >> 4);
    asm("TBLWT*+");
    TABLAT = (flashWrBufPtr[1] & 0x0f);
    asm("TBLWT*+");
    TABLAT = (flashWrBufPtr[2] >> 4);
    asm("TBLWT*+");
    TABLAT = (flashWrBufPtr[2] & 0x0f);
    asm("TBLWT*");
   
    TBLPTRU = (uint8_t) 0x20;
    TBLPTRH = (uint8_t) 0;
    TBLPTRL = (uint8_t) 0;  
   
    EECON1bits.EEPGD = 1;
    EECON1bits.CFGS = 0;
    EECON1bits.WREN = 1;
   
    INTCONbits.GIE = 0; // Disable interrupts
    EECON2 = 0x55;
    EECON2 = 0xAA;
    EECON1bits.WR = 1;  // Write like the wind!
    INTCONbits.GIE = GIEBitValue;   // Restore interrupt enable
    EECON1bits.WREN = 0;    // Disable writes to memory   
}