[问答]

STM8L15x内部RC振荡器校准

问答对人有帮助，内容完整，我也想知道答案 0 亲，在我计划的应用中允许的振荡器频率容差为1％。我想使用HSI并定期进行校准。有一个描述过程+ SW代码的应用笔记。在那里应用的方法是测量一些参考频率并比较测量频率与已知值。频率参考应由外部晶体产生。方法还可以，但这样就需要外部晶体（=金钱，PCB位置）。我想到了另一种方法。我想用温度传感器校准HSI振荡器。最好的事情是构建任何线性（或另一个）函数 - 频率（温度），但数据表没有频率与温度特性（只有-2到+ 2％的范围），所以如果我想要这种方法，我可以尝试在实验中自己找到这个功能，或者稍微另一种方法是建立一个查找表，也在实验中。在提到的应用程序中。注意我发现了关于这种方法的简短通知，但我有点怀疑也许我错过了一些东西而且我没注意这种方法可能存在的潜在问题？我现在看到的应用程序将处于Active Halt模式，唤醒时间为1秒。唤醒后，它将在让我们说300us时运行。在此运行模式或甚至5秒内，我可以打开仅需要20us的温度传感器进行测量。任何帮助都会很高赞赏。 E.L。以上来自于谷歌翻译以下为原文 Dear, The allowed tolerance of oscillator frequency in my planned application is 1%. I'd like to use HSI and periodically to calibrate it. There is an application note describing the process + SW code. The method applied there is to measure some referenced frequency and to compare the measured frequency vs the known value. The frequency reference should be generated by an external crystal. The method is OK, but in this way external crystal is required( = money, PCB place). I thought about another approach. I'd like to calibrate the HSI oscillator with temperature sensor. The best thing would be to build any linear(or another) function - Freq (temperature) but the Datasheet does not have Freq vs Temperature characteristic ( just a range of -2 to +2 %), so if I want this approach I could try to find the function by myself in experiment, Or slightly another method is to build a look-up table, also in experiment. In the mentioned App. note I found a brief notice regarding this method, but I have a little doubt perhaps I'm missing something and I'm not paying attention to a potential problem that might exists with this approach ? My application, as I see it now, will be in Active Halt mode with a wake-up period of 1 sec. Upon the wake-up it will be run during let's say 300us. During this run-mode or even one in 5sec I may turn on the temperature sensor that needs just 20us to be measured. Any help would be highly appreciated. E.L. 0
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答案对人有帮助，有参考价值 0 嗨Yevpator，只需一条评论，HSI频率取决于电源电压（VDD），因此您的实验应在与最终应用相同的电压下完成。如果您打算通过电池为STM8L供电，那么您应该对其进行处理。以上来自于谷歌翻译以下为原文 Hi Yevpator, Just one comment, the HSI frequency depends on the supply voltage (VDD) so your experiments should be done at the same voltage as the final application. If you are planning to power your STM8L by a battery so you should take care of it.

2019-1-30 12:57:57 评论举报刘萍

答案对人有帮助，有参考价值 0 由于内部LDO，Vdd对HSI没有影响。 HSI可以在计划时削减 lowpowermcu 2011年6月29日星期三下午7:44 STM8L15x内部RC振荡器校准嗨Yevpator，只需一条评论，HSI频率取决于电源电压（VDD），因此您的实验应在与最终应用相同的电压下完成。如果您打算通过电池为STM8L供电，那么您应该对其进行处理。以上来自于谷歌翻译以下为原文 Because of The internal LDO, Vdd is not impact to HSI. HSI can trim when program lowpowermcu Wednesday, June 29, 2011 7:44 PM STM8L15x internal RC oscillator calibration Hi Yevpator, Just one comment, the HSI frequency depends on the supply voltage (VDD) so your experiments should be done at the same voltage as the final application. If you are planning to power your STM8L by a battery so you should take care of it.

2019-1-30 13:14:34 评论举报钱丘宝