【PDF】ESD (Electrostatic Discharge) Protection in CMOS Integrated Circuit

互补式金氧半集成电路之静电放电防护...............................................................................1
ESD (Electrostatic Discharge) Protection in CMOS Integrated Circuits ..........................1
目录..........................................................................................................................................2
第一章 简介 (Introduction) ....................................................................................................4
第二章 静电放电的模式以及工业测试标准.........................................................................6
2.1 人体放电模式 (Human-Body Model, HBM) :.........................................................6
2.2 机器放电模式 (Machine Model, MM).....................................................................8
2.3 组件充电模式 (Charged-Device Model, CDM).......................................................9
2.4 电场感应模式(Field-Induced Model, FIM) ............................................................12
第三章 静电放电的测试.......................................................................................................13
3.1 静电放电测试组合..................................................................................................13
3.2 静电放电测试方式..................................................................................................16
3.3 静电放电故障判断..................................................................................................17
3.4 静电放电测试结果的判读......................................................................................18
第四章 静电放电防护设计之基本概念...............................................................................20
4.1 防护电路之设计概念..............................................................................................20
4.2 防护组件之选用......................................................................................................22
4.3 静电放电防护电路的实例......................................................................................23
第五章 传输线触波产生器系统(TLPG System) .................................................................26
5.1 前言..........................................................................................................................26
5.2 传输线触波原理......................................................................................................28
5.3 传输线触波产生器(TLPG)的组装.........................................................................32
5.4 传输线触波产生器的应用......................................................................................38
5.5 TLPG 的组装实例....................................................................................................40
第六章 互补式金氧半集成电路之静电放电防护技术.......................................................43
6.1 前言..........................................................................................................................43
6.2 制程上(Process Level)的改进方法.........................................................................45
6.3 组件上(Device Level)的改进方法..........................................................................49
6.3.1 LVTSCR 组件........................................................................................................49
6.3.2 互补式LVTSCR 组件的设计..............................................................................52
6.3.3 高噪声免疫力的LVTSCR 组件..........................................................................57
6.4 电路上(Circuit Level)的改进方法..........................................................................65
第七章 全芯片防护设计.......................................................................................................77
7.1 内部异常损伤的问题...............................................................................................77
7.2 VDD 与VSS 间的ESD 防护..................................................................................82
7.3 先进制程对ESD 拑制电路的影响........................................................................89
7.4 节省面积的创新设计..............................................................................................92
7.5 在Mixed-Mode IC 的应用......................................................................................99
7.6 结论.......................................................................................................................104
第八章 静电放电防护设计之案例探讨.............................................................................105
8.1 组件充电模式之防护设计 (CDM ESD Protection) ...........................................105
ESD Protection in CMOS Integrated Circuits
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8.2 动态浮接闸级之ESD 防护技术.......................................................................... 111
第九章 静电放电防护技术相关之美国专利与研究论文 US Patents and Research Papers
on the ESD Protection Techniques........................................................................................122
9.1 ESD 相关之美国专利............................................................................................122
9.2 ESD 相关之研究论文............................................................................................122
第十章 结 论.......................................................................................................................123
REFERENCES.....................................................................................................................124
ESD Links............................................................................................................................126