Design and Preparation High Eff iciency Thin2Film Transformer at 200MHz

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Design and Preparation High Eff iciency Thin2Film Transformer at 200MHz

Abstract :A novel microwave ferrite thin2film t ransformer based on Si IC technology was presented. RF
magnet ron sp ut tering was used to prepare ferrite t hin film on SiO2 layer . The ferrite film of surface ap2
pear s crack by observation of SEM. EDS analysis of t hin film showed t hat t hin film has poor cohesiveness
to SiO2 layer or Al film. These compatible p roblems of t hin film wit h IC technology were resolved t hrough
sp ut tering parameter s modification and heating t reatment addition. The t hin2film t ransformer was fabrica2
ted and t ransmission parameters have been measured at 20 MHz～210 MHz. Experience result s showed
t hat t he maximal Vout and V in radio of t he t hin2film t ransformer s is approximately 79 % at 90 MHz～210
MHz ,and t he t hin2film t ransformer has fine waveform t ransmission ability at 20 MHz to 210 MHz.
Key words :t hin2film t ransformer ; IC technology ;microwave ferrite
EEACC:2140 ;2560Z;3120N

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