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电机控制和电源管理的基准效率

2023-6-27 16:09:32 1078 GaN

0 *附件：Infineon-AutomaticOpeningSystem-ABR-v01_00-EN[1].pdf 600V CoolGaN™ Integrated Power Stage (IPS) to deliver high density, high efficiency solution IGI60F1414A1L combines a half-bridge power stage consisting of two 140 mΩ (typ. R ~~DS(on)~~ ) / 600V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8x8 mm QFN-28 package. It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance R~~DS(on)~~ is always guaranteed, independent of temperature and parameter variations. The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300V/ns. 0
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