VS3620GEMC 30V/40A N-Channel Advanced Power MOSFET

Features

Enhancement mode

Very low on-resistance

VitoMOS® Ⅱ Technology

Fast Switching and High efficiency

100% Avalanche test
V
DS
30
V
R
DS(on),TYP@ VGS=10 V
4.9
mΩ
R
DS(on),TYP@ VGS=4.5 V
8
mΩ
I
D(Silicon Limited)
60
A
I
D(Package Limited)
40
A
V(BR)DSS
Drain-Source breakdown voltage
30
V
VGS
Gate-Source voltage
±20
V
IS
Diode continuous forward current
TC = 25°C
60
A
ID
Continuous drain current @VGS=10V (Silicon limited)
TC = 25°C
60
A
ID
Continuous drain current @VGS=10V (Silicon limited)
TC = 100°C
38
A
ID
Continuous drain current @VGS=10V (Package limited)
TC = 25°C
40
A
IDM
Pulse drain current tested ①
TC = 25°C
240
A
IDSM
Continuous drain current @VGS=10V
TA = 25°C
21
A
TA = 70°C
17
A
EAS
Avalanche energy, single pulsed ②
20
mJ
PD
Maximum power dissipation
TC = 25°C
30
W
TC = 100°C
12
W
PDSM
Maximum power dissipation ③
TA = 25°C
3.6
W
TA = 70°C
2.3
W
TSTG,TJ
Storage and Junction Temperature Range
-55 to 150
°C
Thermal Characteristics
Symbol
Parameter
Typical
Max
Unit
RθJC
Thermal Resistance, Junction-to-Case
4.2
5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
35
42
°C/W

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