怎么读写闪存PIC32MX530F128H？

你好，基本上我用下面的程序写在内部闪存上，我试图写0x30313234值在0x1D003000闪存地址上，它已经成功了，但是我怎么能从相同的特定地址再读一次这个值呢？NVMADDR=0x1D003000；//物理地址NVMDATA=0x30313234；//valuevoidNVMInitiate.(void){int int_status；//当前中断启用状态int dma_susp的存储；//当前DMA状态的存储//.bleInter.sasmvolatile(“di%0”：“=r”(int_status))；//.bleDMAif(!(dma_susp=DMACONbits.SUSPEND)){DMACONSET=_DMACONSET_SUSPEND_MASK；//.nd.((DMACONbits.DMABUSY))；//等待实际挂起}NVMKEY=0xAA996655；NVMKEY=0x5566AA；NVMCONSET=NVMCON_WR；//必须是原子指令//如果(!{DMACONCLR=_DMACON=_DMACON_SUSPEND_MASK；//恢复DMA活动}//恢复DMA活动}}//恢复中断，如果(int_状态&；0x00000000001){asm挥发性("ei"){}}asm挥发性("ei")}}}无效NVMWrite(无效){//设置地址和数据寄存器NVMADDR NVMADDR=0x1DDDDDDDDDDD0000000000000000000x1D1000；//物理地址NVMDMDATA=0x3030313131ATA=0x303030303030303030303030303134物理地址NVVVMDATA操作n，假设WREN=0NVMCONbits.NVMOP=0x1；//NVMOP for Word.//Enable Flash for write操作，并设置NVMOP NVMCONSET=NVMCON_WREN；//StartprogrammingNVMInitiate.()；//参见示例52-1//Wait for WR位清除（NVMCON&NVMCON_WR）；//禁用将来的Flash写/擦除操作NVMCONCLR=NVMCON_WREN；//如果(NVMCON&0x3000)//WRERR和LVDERR{//进程错误}的掩码为空NVMErase(void){//设置目的地页地址NVMADDR=0x1D008000；//页物理地址//定义闪存操作NVMCONbits.NVMOP=0x4；//NVMOP for Page Erase//Enable Flash Write NVMCONSET=NVMCON_WREN；//开始编程NVMInitiate.()；//参见示例52-1//等待清除WR位（NVMCON&NVMCON_WR）；//禁用将来的Flash Write/Erase操作NVMCONCLR=NVMCON_WREN；//如果(NVMCO_WREN)检查错误状态N/AMP；0x3000）/ /用于WRRR和LVDRR位{//过程错误}的掩码