如何将测量平面移至设备平面？

大家好日子。
这是我的第一篇文章，我非常需要你的帮助。
对于我的项目，我想测量DUT的S11和S21。
我的DUT是各种薄片材料，大约2x2cm，厚度为0.1cm，夹在两个矩形波导之间。
我有2个VNA供我使用。
1. Agilent E5070B 2. Advantest R3767CG。
为了仅测量DUT（不包括波导）的S11和S21，我需要将测量平面移动到器件平面。
如附图所示。
我在谷歌上做了很多阅读，谷歌搜索的结果并不详细和令人满意，或者它们对我的理解太过提前了。
根据Rohde＆amp; Sons的应用报告。
Schwarz关于“介电材料特性的测量”，这可以通过调整电气长度或使用大多数vna中存在的去嵌入功能来完成。
我无法在我的两个vna的手册中找到关于“去嵌入”功能的任何内容，但我发现我有电子延迟功能。
可悲的是，我不知道如何计算所需的延迟。
如何计算所需的电气长度校正以排除波导的影响？
请帮助我，任何帮助将深表感谢。



     以下为原文

  Good day to everyone.

This is my first post and i greatly need your help.
For my project, i would like to measure the S11 and S21 of a DUT.
my DUT, are various thin pieces of material, approximately 2x2cm, and 0.1cm thick will be sandwich between two rectangular waveguides.

i have 2 VNA at my disposal.  
1. Agilent E5070B  
2. Advantest R3767CG.

In order to measure the S11 and S21 of ONLY the DUT (excluding the waveguides)
i need to shift the measurement plane to the device plane.
as shown in the attached picture.

I've done lots of reading in google, and the googled results are not detail and satisfactory, or maybe they are too advance for my understanding.

According to an application note by Rohde& Schwarz on "measurement of dielectric material propertiess", this can be done by  
-adjusting the electrical length or  
-using the de-embedding function present in most vna.

I cant find anything about "de-embedding" feature in the manual of my both vna, but i found out that i have the electrical delay function. Sadly, i have no idea how to calculate the delay required.

How can i calculate the required electrical length correction to exclude the effects of the waveguides?
Please help me, any help will be deeply appreciated.   
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