怎么反转30V电源极性

真的是10毫秒，还是说10万毫安？你考虑过使用DPDT继电器吗？



      以下为原文

   
Is that really 10ms, or did you mean 10mA?
Have you considered using a DPDT relay?
 

线性技术用于具有一些可处理这种电压和电流（IIrC）的飞行电容器电路。有两个，你可以选择哪一个是启用，但我从来没有使用它们，不知道他们是否容忍相反极性在他们的输出时禁用。



      以下为原文

    Linear Technology used to have some flying-capacitor circuits that could handle that kind of voltage and current (IIRC).  With two of them, you could pick which one is enabled but I never used them and don't know if they tolerate opposite polarity on their outputs when disabled.
 
Likely QHB's suggestion is better.
 
GP

真的是10毫秒，还是说10万毫安？你考虑过使用DPDT继电器吗？把它改为10MADPDT是一个开关，不能使用它需要在某些频率下用PIC切换极性。



      以下为原文

   
Is that really 10ms, or did you mean 10mA?
Have you considered using a DPDT relay?
 




Changed it to 10mA
 
DPDT is a switch, can't use it need to switch polarity by PIC at some frequency.

为什么不？如果你没有提到什么频率？1赫兹？100赫兹？



      以下为原文

   
why not?
 

Meaningless statement if you do not mention what frequency.
1 Hz?
100 Hz
1000 Hz?
 
 

NMOS H桥需要一种为高侧提供栅极电压的方法，并且自举电路不适合于非振荡应用。对于30V和相当低的电流，您可以使用PMOS在高端，和一个简单的电平转换器的栅极驱动器。四个光隔离器可以很好地工作。您可以获得额定值为60V和500毫安的DIP包装，一美元左右：HTTP//www. Mous.COM/DS/2/408/TLP222AYAdSeHeTeTyEn201201901-73694.PDF



      以下为原文

    NMOS H bridges need a way to provide gate voltage for the high side, and bootstrap circuits are not suitable for non-oscillating applications. For 30V and fairly low current, you can use PMOS on the high side, and a simple level converter for gate drive. Four opto-isolators might work well. You can get DIP packages rated at 60V and 500 mA for a dollar or so:
http://www.mouser.com/ds/2/408/TLP222A_datasheet_en_20140901-736994.pdf
 

这里是8针驱动IC，适合您的需求：DRV88 70和DRV88 71.



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    Here are the 8-pin driver ICs which fit your needs exactly: DRV8870 and DRV8871.
 

为什么不？如果你没有提到什么频率？1赫兹？100赫兹？PIC如何控制双掷、双掷（DPDT）开关？



      以下为原文

   
why not?
 

Meaningless statement if you do not mention what frequency.
1 Hz?
100 Hz
1000 Hz?
 
 


How PIC would controll double-pole, double-throw (DPDT) switch?
 

你错过了“中继”这个神奇的单词吗？



      以下为原文

   
Did you miss the magic word "relay" ?
 

是的，我看了Simmiar芯片上的DigiKy。只是不确定它是否能在输出上产生这么小的电流。



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Yes, I looked simmilar chip on Digikey.  Just not sure if it will work with so small currents on output.

      以下为原文

   

你错过了“中继”这个神奇的单词吗？我做到了，但是它不能用，30V来自小的3.7V电池，电流和容量都很小，所以要注意电源。



      以下为原文

   
Did you miss the magic word "relay" ?
 




 
I did, but it cant be used, 30V is from small 3.7V battery with small current and capacity, so taking care for power.

如果你先提到这些细节，你会更快地找到一个合适的解决方案。



      以下为原文

    You would get to a suitable solution quicker if you mentioned these details first.
 
 

真的是10毫秒，还是说10万毫安？你考虑过使用DPDT继电器吗？把它改为10MADPDT是一个开关，不能使用它需要在某些频率下用PIC切换极性。你知道继电器是什么吗？



      以下为原文

   
Is that really 10ms, or did you mean 10mA?
Have you considered using a DPDT relay?
 




Changed it to 10mA
 
DPDT is a switch, can't use it need to switch polarity by PIC at some frequency.


Do you know what a relay is?

OP还没有告诉我们，如果一方需要被引用到0V，在这种情况下，H桥是没有用的。



      以下为原文

   


The OP hasn't told us if one side needs to be referenced to 0V, in which  case a H-bridge is no use.

最有可能复兴和设计的电路继电器超过你见过你的生活。30Y以前用来安装和维护电话交换机时，所有的继电器。



      以下为原文

   
Most likely revired and  designed circuits with relays more than you have seen in your life.
30 y ago use to install and maintain telephone exchanges when all was made with relays.
 

OP还没有告诉我们，如果一方需要被引用到0V，在这种情况下，H-桥是没有用的。对不起，我不能考虑所有的事情，我主要关心的是使用晶体管、MOSFET、比较器或H桥。我相信我会用DRV88 72AS AS @ Mbddor建议。它也有限制电流的选择。



      以下为原文

     



The OP hasn't told us if one side needs to be referenced to 0V, in which  case a H-bridge is no use.



No it doesn't.
 
Sorry, I couldnt think about everything, my main concern was to find out to use transistors, mosfet, comparator or H-bridge.
 
I believe I'll go with DRV8872
as @MBedder
suggested. It has an option to limit current as well.
 

在查看DRV872的数据后，使用更多的DISILVSVM，电源电流为3-10毫安，在电源不是问题的情况下可以使用。但是在30V提供30V的电源，250mAh 3.7V电池和DCDC转换器将是100mA，这是太多了，并且电池将持续2小时，仅用于电源CH。需要找到更好的解决方案。悲伤：



      以下为原文

    After looking data for DRV8872 with more details
 
VM operating supply current is 3-10mA
 
It would be ok to use where the power is not an issue.
 
But 10mA on 30V supplied, from 250mAh 3.7V battery and DCDC converter would be 100mA, it is far too much and the battery would last 2 hours only to power the chip.
 
Need to find better solution. sad:

在30V的10mA为300毫瓦，在100%的效率下，电池将至少为81毫安，因此在100毫安时，电池最多只能持续约2.5小时，并且由于在Li Ion cells上不应该低于20%的容量，如果使用NMOS和PMOS，则大约2小时将达到最大值。桥，你应该能够驱动它小于1毫安总电流时，不切换。低侧MOSFET可以直接驱动逻辑电平类型基本上为零栅极电流。高侧PMOS器件可以用小的低侧NMOS器件和250K/50K分频器驱动，这将在30VDC上只吸引100 UA。您也可以使用微功率轨到轨双运放，如OPA2170或LT1852（最多10mA）和LM7322（高达100mA）。



      以下为原文

    10mA at 30V is 300 mW, and will be at least 81 mA from the battery at 100% efficiency, so figure on 100 mA, so the battery will last only about 2.5 hours at best, and since you should not go much below 20% capacity on Li-Ion cells, about 2 hours will be about max. If you use NMOS and PMOS for the H-bridge, you should be able to drive it with less than 1 mA total current when not switching. The low-side MOSFETs can be directly driven logic level types with essentially zero gate current. The high side PMOS devices can be driven with small low-side NMOS devices and something like a 250k/50k divider which will draw only 100 uA on 30VDC.
 
You might also be able to use a micropower rail-to-rail dual op-amp, like OPA2170 or LT1882 (for up to 10mA) and LM7322 (for up to 100mA).

非常感谢“PStechPaul”，直截了当地说。我看H-BaseMasFET.CUTE，因为这一个可以工作。但是GS最大电压是20VI，如果用晶体管集电极线加20K，VGS不会超过10V。栅极电阻R5，RT也变为20K，所以分压器L。我在门前开了10V，我需要做50块木板。如果犯错误将是浪费金钱，很难用这样的小部件制作一个原型。OP—AMP可能是一个更好的简单解决方案，但我有一个担心。如果运算放大器用30V供电，我不确定输入是否可以直接连接到PIC。如果我看一个电路上的图片。然后当绿色晶体管在30V时通过输入晶体管的E-B，并在输入上产生27.3V。



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    Thanks a lot @PStechPaul , straight to the point