[分享]三极管的Pspice模型参数

2008-5-12 22:19:21 14548

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附件A、三极管的Pspice模型参数

                .Model NPN(PNP、LPNP) [model parameters]

模型参数

含         义

单    位

默认值

备         注

AF

flicker noise exponent

1.0

噪声指数

BF

ideal maximum forward beta

100.0

最大正向放大倍数

BR

ideal maximum reverse beta

1.0

最大反向放大倍数

CJC

base-collector zero-bias p-n capacitance

farad

0.0

集电结电容

CJE

base-emitter zero-bias p-n capacitance

farad

0.0

发射结电容

CJS (CCS)

Substrate zero-bias p-n capacitance

farad

0.0

EG

bandgap voltage (barrier height)

eV

1.11

FC

forward-bias depletion capacitor coefficient

0.5

GAMMA

epitaxial region doping factor

1E-11

IKF (IK)

corner for forward-beta high-current roll-off

amp

infinite

IKR

corner for reverse-beta high-current roll-off

amp

infinite

IRB

current at which Rb falls halfway to

amp

infinite

IS

transport saturation current

amp

1E-16

饱和电流

ISC (C4)

base-collector leakage saturation current

amp

0.0

集电结漏电流

ISE (C2)

base-emitter leakage saturation current

amp

0.0

发射结漏电流

ISS

substrate p-n saturation current

amp

0.0

ITF

transit time dependency on Ic

amp

0.0

KF

flicker noise coefficient

0.0

噪声系数

MJC (MC)

base-collector p-n grading factor

0.33

MJE (ME)

base-emitter p-n grading factor

0.33

MJS (MS)

substrate p-n grading factor

0.0

NC

base-collector leakage emission coefficient

2.0

集电结漏电系数

NE

base-emitter leakage emission coefficient

1.5

发射结漏电系数

NF

forward current emission coefficient

1.0

正向电流系数

NK

high-current roll-off coefficient

0.5

NR

reverse current emission coefficient

1.0

NS

substrate p-n emission coefficient

1.0

PTF

excess phase @ 1/(2p?TF)Hz

degree

0.0

QCO

epitaxial region charge factor

coulomb

0.0

RB

zero-bias (maximum) base resistance

ohm

0.0

最大基极电阻

RBM

minimum base resistance

ohm

RB

最小基极电阻

RC

collector ohmic resistance

ohm

0.0

RCO

epitaxial region resistance

ohm

0.0

RE

emitter ohmic resistance

ohm

0.0

TF

ideal forward transit time

sec

0.0

正向传递时间

TR

ideal reverse transit time

sec

0.0

反向传递时间

TRB1

RB temperature coefficient (linear)

⁰C ^-1

0.0

RB的温度系数

TRB2

RB temperature coefficient (quadratic)

⁰C ^-2

0.0

TRC1

RC temperature coefficient (linear)

⁰C ^-1

0.0

TRC2

RC temperature coefficient (quadratic)

⁰C ^-2

0.0

TRE1

RE temperature coefficient (linear)

⁰C ^-1

0.0

TRE2

RE temperature coefficient (quadratic)

⁰C ^-2

0.0

TRM1

RBM temperature coefficient (linear)

⁰C ^-1

0.0

TRM2

RBM temperature coefficient (quadratic)

⁰C ^-2

0.0

T_ABS

absolute temperature

⁰C

T_MEASURED

measured temperature

⁰C

T_REL_GLOBAL

relative to current temperature

⁰C

T_REL_LOCAL

relative to AKO model temperature

⁰C

VAF (VA)

forward Early voltage

volt

infinite

VAR (VB)

reverse Early voltage

volt

infinite

VJC (PC)

base-collector built-in potential

volt

0.75

VJE (PE)

base-emitter built-in potential

volt

0.75

VJS (PS)

substrate p-n built-in potential

volt

0.75

VO

carrier mobility knee voltage

volt

10.0

VTF

transit time dependency on Vbc

volt

infinite

XCJC

fraction of CJC connected internally to Rb

1.0

XCJC2

fraction of CJC connected internally to Rb

1.0

XTB

forward and reverse beta temperature coefficient

0.0

正向和反向放大倍数的温度影响系数

XTF

transit time bias dependence coefficient

0.0

传递时间系数

XTI (PT)

IS temperature effect exponent

3.0

IS的温度影响系数

附件B、 PSpice Goal Function

特征函数

功能说明

Bandwidth (1, db_level)

计算波形1从最大值下降db_level db的波形宽度。

BPBW (1, db_level)

   Same as Bandwidth (1, db_level)

CenterFreq (1, db_level)

计算波形1从最大值下降db_level db的两点的中心频率。

Falltime (1)

计算波形1的下降时间。

Gain Margin (1,2)

计算波形1的相位为-180^。时，波形2的分贝值。

GenFall (1)

类似于Falltime (1)，但它的下降时间相对的y轴是起点于终点，而不是最大值与最小值。

GenRise (1)

与GenFall (1)类似，只是它是上升时间。

HPBW (1, db_level)

查找第一次比最大值低db_level db的x坐标。（上升沿）

LPBW (1, db_level)

与HPBW类似，只是用于下降沿。

Maxr (1, begin-x, end-x)

查找区间的最大值。

Overshoot (1)

计算最大值与终点之间y轴坐标差与终点值的百分比。

Peak (1, n_occur)

查找第n-occur个峰值点的Y值

Period (1)

计算波形1的周期。

Phase Margin (1,2)

查找波形1在0分贝时波形2的相位。

Pulsewidth (1)

计算波形1的脉冲宽度。

Risetime (1)

计算波形1的上升时间。

Swingr (1, begin-x, end-x)

计算在指定范围内，波形1的最大值与最小值之差。

TPmW2 (1, Period)

XatNthy (1, Y-value, n-occur)

查找波形1上第n-occur个Y-value值时的X坐标值。

XatNthYn(1,Y_value,n_occur)

与XatNthy类似，但它查找的Y值必须在下降沿上。

XatNthYp(1,Y_value,n_occur)

与XatNthy类似，但它查找的Y值必须在上升沿上。

XatNthYpct(1,Y_PCT,n_occur)

查找第n-occur个Y轴值为Y轴范围的Y_pct%时的X轴值。

YatX(1,X_value)

查找X-value值处的Y值。

YatXpct(1,X_pct)

查找X轴值为X轴范围的X_pct%时的Y轴值。

附件C

Modeling voltage-controlled and temperature-dependent resistors

Analog Behavioral Modeling (ABM) can be used to model a nonlinear resistor through use of Ohm抯 law and tables and expressions which describe resistance. Here are some examples.

Voltage-controlled resistor

If a Resistance vs. Voltage curve is available, a look-up table can be used in the ABM expression. This table contains (Voltage, Resistance) pairs picked from points on the curve. The voltage input is nonlinearly mapped from the voltage values in the table to the resistance values. Linear interpolation is used between table values.

Let抯 say that points picked from a Resistance vs. Voltage curve are:

Voltage

Resistance

0.5

25

1.0

50

2.0

100

The ABM expression for this is shown in Figure 1.

Figure 1 - Voltage controlled resistor using look-up table

Temperature-dependent resistor

A temperature-dependent resistor (or thermistor) can be modeled with a look-up table, or an expression can be used to describe how the resistance varies with temperature. The denominator in the expression in Figure 2 is used to describe common thermistors. The TEMP variable in the expression is the simulation temperature, in Celsius. This is then converted to Kelvin by adding 273.15. This step is necessary to avoid a divide by zero problem in the denominator, when T=0 C.

NOTE: TEMP can only be used in ABM expressions (E, G devices).

Figure 3 shows the results of a DC sweep of temperature from -40 to 60 C. The y-axis shows the resistance or V(I1:-)/1A.

Figure 2 - Temperature controlled resistor

Figure 3 - PSpice plot of Resistance vs. Temperature (current=1A)

Variable Q RLC network

In most circuits the value of a resistor is fixed during a simulation. While the value can be made to change for a set of simulations by using a Parametric Sweep to move through a fixed sequence of values, a voltage-controlled resistor can be made to change dynamically during a simulation. This is illustrated by the circuit shown in Figure 5, which employs a voltage-controlled resistor.

Figure 4 - Parameter sweep of control voltage

This circuit employs an external reference component that is sensed. The output impedance equals the value of the control voltage times the reference. Here, we will use Rref, a 50 ohm resistor as our reference. As a result, the output impedance is seen by the circuit as a floating resistor equal to the value of V(Control) times the resistance value of Rref. In our circuit, the control voltage value is stepped from 0.5 volt to 2 volts in 0.5 volt steps, therefore, the resistance between nodes 3 and 0 varies from 25 ohms to 100 ohms in 25 ohm-steps.

Figure 5 - Variable Q RLC circuit

A transient analysis of this circuit using a 0.5 ms wide pulse will show how the ringing differs as the Q is varied.

Using Probe, we can observe how the ringing varies as the resistance changes. Figure 6 shows the input pulse and the voltage across the capacitor C1. Comparing the four output waveforms, we can see the most pronounced ringing occurs when the resistor has the lowest value and the Q is greatest. Any signal source can be used to drive the voltage-controlled resistance. If we had used a sinusoidal control source instead of a staircase, the resistance would have varied dynamically during the simulation.

Figure 6 - Output waveforms of variable Q RLC circuit

2008-5-12 22:19:21　　评论 淘帖0 举报

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0 下来看看

2009-3-16 16:38:57 评论举报 2^# edelajiang

0 多谢了！

2009-3-28 11:39:57 评论举报 3^# wwwlllfff526

0 好详细的参数啊... 不过.一般人要是看见了,就一个三极管就这样..其它的还不要..... 信心都没了.

2009-4-20 12:21:28 评论举报 4^# votasee

0 好资料，谢谢楼主

2010-3-25 09:19:11 评论举报 5^# 89592

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搜索历史

[分享]三极管的Pspice模型参数

附件C

Modeling voltage-controlled and temperature-dependent resistors

Voltage-controlled resistor

Temperature-dependent resistor

Variable Q RLC network

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