在接下来的几周内，安森美半导体的专家将在路上，帮助设计工程师在美国和加拿大的五个地点解决他们的电源应用挑战。
安森美半导体的电力研讨会侧重于技术和技术，而非产品。
我们邀请您与我们的电源专家会面，探讨电源设计的最新进展，探讨以下主题：SiC MOSFET，控制环路，SPICE建模和功率密度。
立即注册！
SiC MOSFET，关键设计要求和优化栅极驱动。
本演讲将介绍SiC MOSFET的详细特性，使其非常适合高压，高速，功率应用。
将描述与用于最大化SiC切换性能的最佳栅极驱动设计相关的关键设计要求。
还将介绍通过高性能SiC栅极驱动器IC简化设计适当的栅极驱动电路的任务。
控制回路设计和简易验证方法
该演示文稿提供了一种简单的方法，用于测量和优化交换系统的控制回路。
在简要介绍控制回路理论和稳定性标准之后，对该系统的评估进行了解释。
在实践中使用PWM仿真模型来预测回路稳定性，同时快速概述可获得的结果。
提出了一种在真实环境中实现控制回路测量的简单方法，然后是使用标准计算工具的优化方法。
用于现代电力电子设备的基于物理的可扩展SPICE建模方法
现代电力电子技术涵盖了广泛的半导体器件类型，所有这些都在设计范围内呈现出独特的优势和权衡。
这些器件包括IGBT，超级结MOSFET，沟槽MOSFET，GaN HEMT，SiC MOSFET和SiC二极管。
为了实现所有单个设备的优势和权衡，高效的电力电子设计取决于准确和预测SPICE模型的可用性。
本演示文稿为包括宽带隙器件在内的功率电子半导体提出了新颖的物理和可扩展SPICE模型。
这些模型基于工艺和布局参数，通过SPICE，物理设计和工艺技术之间的直接链接实现设计优化。
这些模型在技术开发和新产品的推广中被用作关键设计组件。
寻求功率密度
最近几天，功率密度成为电源和电力系统创新和性能的重要且日益普遍的优点。
实现高功率密度意味着利用最新的功率转换拓扑进步，采用最先进的控制方法并使用可用于设计人员的最佳半导体技术。
在这个演示中，我们努力将这些拼图连接起来以获得高功率密度。
我们将了解电源设计的最新趋势，技术优势和高功率密度设计的成本优势，以及最新的半导体技术 - 主要是GaN功率开关 - 如何帮助我们实现高效率的最终目标，
高性能，高可靠性和低成本解决方案。
关于GaN器件的关键特性，布局和驱动要求以及带波形的应用示例的重要细节将为讨论增加实际方面。
有关日期和地点，以及注册您附近的安森美半导体电力研讨会，请访问此处。
以上来自于谷歌翻译
以下为原文
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In the next few weeks, ON Semiconductor experts will be on the road, helping design engineers solve their power application challenges in five locations across America and Canada.
ON Semiconductor’s power seminars focus on technologies and techniques, not products. We invite you to meet our power experts and explore the latest advancements in power supply design as they explore the following topics: SiC MOSFETS, Control Loop, SPICE Modeling and Power Density.
Register Today!
SiC MOSFETs, Critical Design Requirements and Optimized Gate-Driving.
This presentation will cover detailed characteristics of SiC MOSFETs that make them well suited for high-voltage, high-speed, power applications. Critical design requirements related to optimal gate drive design for maximizing SiC switching performance will be described. The task of designing an adequate gate drive circuit simplified by a high performance, SiC gate driver IC will also be introduced.
Control Loop Design and Easy Verification Method
This presentation provides a simple methodology applied to measure and optimize the control loop of a switching system. After a brief introduction to control loop theory and stability criteria, the evaluation of such system is explained. The use of a PWM simulation model is shown in practice to predict loop stability, together with a quick overview of obtainable results. A straightforward method to implement control loop measurement on a real environment is presented, followed by an optimization method using standard calculation-tools.
Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices
Modern day power electronics encompasses a wide spectrum of semiconductor device types, all of which present unique benefits and trade-offs in the design spectrum. Such devices include IGBTs, Super Junction MOSFETs, Trench MOSFETs, GaN HEMTs, SiC MOSFETs and SiC diodes. In order to realize all the individual device benefits and trade-offs, efficient power electronic design hinges on the availability of accurate and predictive SPICE models. This presentation proposes novel physical and scalable SPICE models for power electronic semiconductors including wide bandgap devices. The models are based on process and layout parameters, enabling design optimization through a direct link between SPICE, physical design, and process technology. The models are used as a key design component during technology development and for the proliferation of new products.
The Quest for Power Density
In recent days power density became an important and increasingly universal figure of merit of power supply and power system innovation and performance. Achieving high power density implies the utilization of the latest topological advances in power conversion, employing state of the art control methods and using the best semiconductor technology available for the designer.
In this presentation we endeavor on a journey connecting these pieces of the puzzle to obtain high power density. We will take a look at the latest trends of power supply design, technological benefits and cost advantages of designing for high power density and how the latest semiconductor technologies – primarily GaN power switches – can help us to reach our ultimate goal of a high efficiency, high performance, high reliability and low cost solution.
Important details on critical characteristics of GaN devices, layout and drive requirements and application examples with waveforms will add practical aspects to the discussion.
For dates and locations, and to register for the ON Semiconductor Power Seminar near you, visit here.
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