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我相信应用笔记8510-13中描述的“适配器移除”,这是一个令人难以置信的过程,以取消适配器的效果,已经在很大程度上取代了Ferrero和Pisani开发的未知通过http://ieeexplore.ieee
.org / xpl / articleDetails.jsp?arnumber = 173410但是有没有人知道适配器删除的算法是否曾经发布过,还是专有的HP / Agilent / Keysight信息? 谷歌搜索似乎只能找到HP / Agilent / Keysight的参考资料,但它可能已在IEEE期刊或类似期刊上发表。 戴夫 以上来自于谷歌翻译 以下为原文 I believe that the "adapter removal", described in application note 8510-13, which is an incredibly tedious process to take out the effect of adapters, has largely been replaced by unknown thru developed by Ferrero and Pisani http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=173410 But does anyone know if the algorithm for adapter removal was ever published, or is it proprietary HP/Agilent/Keysight information? Googling only seems to find references to HP/Agilent/Keysight, but it might have been published in an IEEE journal or similar. Dave |
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适配器移除方法与“微波元件测量手册”第9.3.1节中公布的相同。
顺便说一句,在布莱切利公园错过了你。 以上来自于谷歌翻译 以下为原文 The adapter removal method is identical to that published in section 9.3.1 of the "Handbook of Microwave Component Measurements". BTW, missed you at Bletchley Park. |
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> {quote:title = Dr_joel写道:} {quote}>适配器删除方法与“微波元件测量手册”第9.3.1节中公布的相同。 干杯。 我会向那些有兴趣在家庭酿造的VNA上实施它的人指出。 > BTW,在布莱切利公园错过了你。 是的,我非常希望能够见到你 - 这是去的主要原因之一! 但是在这方面出现了一些问题。 我确实提前联系了Keysight,所以我的名字应该已经从与会者列表中删除了。 我想有很多种方法可以在VNA上开发纯S参数测量,但是你的PNA-X超出了S参数。 惭愧我买不起! Keysight研讨会非常好 - 我似乎总是学到一些东西。 我和一些来自Virgina Diodes的人的一次对话在Keysight研讨会上特别有趣。 我记得在一个业余无线电列表上听到有人将两个X波段耿恩二极管模块的输出与魔术T相结合,并获得比两个独立功率之和更多的功率 - 即从两个耿氏二极管获得30 mW的功率 模块每个产生10 mW。 有不止一个这样的报告,尽管它似乎不太可能,但我并不完全相信它是疯了,所以我无法抗拒在Keysight研讨会上与几位Gunn二极管专家讨论这个问题。 *其中一位是苏格兰大学的学者,他在太赫兹频率上制作了耿氏二极管。 他认为这完全是垃圾。 *另一个是来自Virgina Diodes的人,他并不感到惊讶。 他基本上说通过将二极管放在Magic-T中,人们完全改变了二极管工作的腔体,因此如果它们在完全不同的腔体中以不同的模式工作,则不应该太惊讶。 希望有一些你在英国的时候见到你。 戴夫 以上来自于谷歌翻译 以下为原文 > {quote:title=Dr_joel wrote:}{quote} > The adapter removal method is identical to that published in section 9.3.1 of the "Handbook of Microwave Component Measurements". Cheers. I will point it out to someone who is interested in implementing it on a home-brew VNA. > BTW, missed you at Bletchley Park. Yes, I was rather hoping to see you too - one of the main reasons for going! But something came up at this end. I did contact Keysight in advance though, so my name should have been removed from the list of attendees. I guess there are are so many ways you can develop pure S-parameters measurements on a VNA, but your PNA-X's go *well* beyond S-parameters. Shame I can't afford one! The Keysight seminars are quite good - I always seem to learn something. One conversation I had with someone from Virgina Diodes was particularly interesting at one of the Keysight seminars. I recall hearing on an amateur radio list about people combining the output of two X-band Gunn diode modules with a magic-T and getting more power out than the sum of the two individual powers - i.e. get something like 30 mW from two Gunn diode modules each producing 10 mW. There had been more than one report of this, and as much as it seemed improbable, I was not totally convinced it was crazy, so I could not resist discussing this with a couple of Gunn diode experts at the Keysight seminar. * One was an academic at a Scottish university who was making Gunn diodes at THz frequencies. He dismissed it as utter rubbish. * The other was a guy from Virgina Diodes who was not surprised at all. He basically said that by putting the diodes in a Magic-T, one has completely changed the cavity the diodes are operating in, so one should not be too surprised if they operate in a different mode in a totally different cavity. Hope to see you some other time you are in the UK. Dave |
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