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所以我刚刚开始使用ADS,之前使用的是LTSpice。
我只是做一些测试运行只是为了确保我知道如何使用该软件并且我设置得恰到好处。 目前,我只关注瞬态分析,因此需要关注谐波平衡或S参数分析以及所有其他分析。 我似乎无法让NMOS组件工作。 如果您查看附带的屏幕截图,我可以从共模正弦波VIN的输入中获得简单的NMOS公共漏极配置。 如您所见,M1的作用类似于接近R值的恒定电阻,使放大器只是一个分压器。 为什么是这样? 我是否有错误的M1组件或者我需要填写更多的参数? 我得到了这个组件:Analog_Parts / AP NMOS器件(无布局),其库位于:$ HPEEOFS_DIR oalibs componentLib Analog_Parts_vendor_kit,它是从以下解压缩的:$ HPEEOFS_DIR oalibs componentLib Analog_Parts_vendor_kit.7z此外,来自提及 上面的库,为什么NMOS和PMOS,Enchancement和Depletion都有相同的符号?编辑:ren_zokuken01于2016年2月16日上午3:50 NMOS_test2.png18.8 KB 以上来自于谷歌翻译 以下为原文 So I just got started on ADS and previously using LTSpice. I'm just doing some test run just to make sure I know how to use the software and I set it up just right. For now, I'm only concerned with Transient analysis, so need to concern myself with HARMonic Balance or S-parameters analysis and all the other ones. I seem to be having trouble getting NMOS components to work. If you would take a look at the attached screenshot, I have a simple NMOS Common Drain configuration from an input of common-mode sine-wave VIN. As you can see, the M1 is acting like a constant resistor close to the value of R, making the amplifier just a voltage divider. Why is this? Do I have the wrong M1 component or maybe I need to fill in more it's parameters? I got this component from: Analog_Parts/AP NMOS Devices (No Layout), whose library is located at: $HPEEOFS_DIRoalibscomponentLibAnalog_Parts_vendor_kit, which was decompressed from: $HPEEOFS_DIRoalibscomponentLibAnalog_Parts_vendor_kit.7z Also, from mentioned library above, why are NMOS and PMOS, Enchancement and Depletion all have the same symbol? Edited by: ren_zokuken01 on Feb 16, 2016 3:50 AM 附件
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你好,正如aehoward所建议的,你应该首先使用FET曲线追踪器来访问器件IV的特性。
我可以看到你没有正确偏置你的晶体管。 在任何情况下,您使用的配置都是公共漏极 - 跟随器,最大小信号增益应该是统一的。 参见附图。不用担心符号,IEEE为FET定义了许多符号。 IV图应该会给你足够的信息。编辑:AlexI于2016年2月20日下午4:31忽略上一个图,第二个是根据您的设置。 评论1.PNG31.1 KB 以上来自于谷歌翻译 以下为原文 Hi ren, As suggested by aehoward, you should first use FET curve tracer to access the device IV characteristic. I can see that you haven't biased your transistor properly. In any case, the configuration you are using is common drain - a follower, the maximum small signal gain is supposed to be unity. See the attached Fig. Don't bother much about symbols, IEEE defines many symbols for FETs. An IV plot should give you sufficient information, though. Edited by: AlexI on Feb 20, 2016 4:31 PM ignore previous fig., second one is according to your setup. 附件
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