如果你想测量高达| Z |
在谐振器的反谐振频率Fa的范围内，串联方法是最好的方法，因为它覆盖了更高的| Z |
范围比反射和分流通过方法。
由于您的谐振器小于10 MHz，您可以使用增益相位测试端口（最高30 MHz），这更便于连接4端子对（4 BNC）阻抗测试夹具，而不是S参数测试
港口。
让我总结一下制作更好的晶体测量的技巧： - 为了精确测量晶体阻抗CI（= | Z |在串联谐振零相位点Fr），需要在Fr周围有足够的测量点（足够的频率分辨率）。
扫描速度arnoud Fr（+/- 45度区域）也不应该非常快。
通常建议将测量范围设置为仅覆盖Fr区域的窄范围（不包括Fa区域），并将IFBW设置为100 Hz的窄值（以降低测量速度）。
- 另一方面，为了执行包括C0的4元件等效电路分析，应该以更宽的跨度执行测量，包括串联谐振Fr和反谐振Fa区域，因为C0是从Fa周围的测量数据中提取的。
- 如果使用带引线的50欧姆电阻器来执行4TP夹具上的开路/短路/负载阻抗校准，请选择“引线50欧姆”的校准套件，其定义包括含铅50欧姆电阻器的近似残余电感值。
- 晶体谐振器通常具有交流电压电平依赖性，您可能想知道施加到DUT的电压。
在增益相位串联方法中，与DUT串联的总阻抗为100欧姆（源输出-Z：50欧姆+接收器T输入-Z：50欧姆）。
当按下电源软键时指示的源功率电平Vsrc（** mV @ 50ohm）表示当源端口终止时，50欧姆终端上的交流电压。
因此开路电压为2 * Vsrc，您可以计算施加到CI的电压为Vci =（Vsrc * 2）* CI /（CI + 100）。
以下研讨会资料（第30页）显示了使用E5061B的crsytal谐振器测量示例（在此示例中，不是增益相位串联方法，而是反射方法）：http：//cp.literature.agilent.com/
litweb / pdf / 5991-0213EN.pdf致敬，Yasuhiro Mori /安捷伦科技公司
以上来自于谷歌翻译
以下为原文
If you wants to measure up to high |Z| range around the resonator's anti-resonant frequency Fa, the series-thru method is the best approach because it covers higher |Z| range than reflection and shunt-thru method. As your resonator is less than 10 MHz, you can use the gain-phase test port (up to 30 MHz) which is more comvenient for connecting the 4-terminal-pair (4 BNC) impedance test fixtures, rather than S-parameter test port.
Let me summerize tips for making better crystal measurements:
- To accurately measure the crystal impedance CI (= |Z| at the series resonant zero-phase point Fr ), it is necessary to have sufficient measurement points (sufficient freq resolution) around Fr and also the sweep speed arnoud Fr (+/-45 degree area) should not be very fast. Generally it is recommend to set the measurement span to a narrow range just covering the Fr area (without including the Fa area) and to set the IFBW to a narrow value like 100 Hz (to slow down the measurment speed).
- On the other hand, to perform the 4-element equivalent circuit analysis including C0, the measurement should be performed with a wider span including both series-resonant Fr and anti-resonant Fa areas because C0 is extracted from the measured data around Fa.
- If you use the leaded 50 ohm resistor to perform the open/short/load impedance cal on the 4TP fixture, selet the cal kit "leaded 50 ohm" whose definition includes an approximate residual inductance value of the leaded 50 ohm resistor.
- Crystal resonators generally have AC voltage level dependency, and you may want to know the voltage applied to the DUT.
In the gain-phase series-thru method, total impedance existing in series with the DUT is 100 ohm (source output-Z: 50 ohm + receiver T input-Z: 50 ohm). The source power level Vsrc (** mV @50ohm) indicated when pressing the power softkey means the AC voltage across the 50 ohm termination when the source port is terminated with it. So the open voltage is 2*Vsrc, and you can calculate the voltage applied to CI as Vci = (Vsrc*2)*CI/(CI+100).
The following seminar material (page-30) shows a crsytal resonator measurement example using the E5061B (in this example, not the gain-phase series-thru method but the reflection method):
http://cp.literature.agilent.com/litweb/pdf/5991-0213EN.pdf
Best regards,
Yasuhiro Mori / Agilent Technologies
如果你想测量高达| Z |
在谐振器的反谐振频率Fa的范围内，串联方法是最好的方法，因为它覆盖了更高的| Z |
范围比反射和分流通过方法。
由于您的谐振器小于10 MHz，您可以使用增益相位测试端口（最高30 MHz），这更便于连接4端子对（4 BNC）阻抗测试夹具，而不是S参数测试
港口。
让我总结一下制作更好的晶体测量的技巧： - 为了精确测量晶体阻抗CI（= | Z |在串联谐振零相位点Fr），需要在Fr周围有足够的测量点（足够的频率分辨率）。
扫描速度arnoud Fr（+/- 45度区域）也不应该非常快。
通常建议将测量范围设置为仅覆盖Fr区域的窄范围（不包括Fa区域），并将IFBW设置为100 Hz的窄值（以降低测量速度）。
- 另一方面，为了执行包括C0的4元件等效电路分析，应该以更宽的跨度执行测量，包括串联谐振Fr和反谐振Fa区域，因为C0是从Fa周围的测量数据中提取的。
- 如果使用带引线的50欧姆电阻器来执行4TP夹具上的开路/短路/负载阻抗校准，请选择“引线50欧姆”的校准套件，其定义包括含铅50欧姆电阻器的近似残余电感值。
- 晶体谐振器通常具有交流电压电平依赖性，您可能想知道施加到DUT的电压。
在增益相位串联方法中，与DUT串联的总阻抗为100欧姆（源输出-Z：50欧姆+接收器T输入-Z：50欧姆）。
当按下电源软键时指示的源功率电平Vsrc（** mV @ 50ohm）表示当源端口终止时，50欧姆终端上的交流电压。
因此开路电压为2 * Vsrc，您可以计算施加到CI的电压为Vci =（Vsrc * 2）* CI /（CI + 100）。
以下研讨会资料（第30页）显示了使用E5061B的crsytal谐振器测量示例（在此示例中，不是增益相位串联方法，而是反射方法）：http：//cp.literature.agilent.com/
litweb / pdf / 5991-0213EN.pdf致敬，Yasuhiro Mori /安捷伦科技公司
以上来自于谷歌翻译
以下为原文
If you wants to measure up to high |Z| range around the resonator's anti-resonant frequency Fa, the series-thru method is the best approach because it covers higher |Z| range than reflection and shunt-thru method. As your resonator is less than 10 MHz, you can use the gain-phase test port (up to 30 MHz) which is more comvenient for connecting the 4-terminal-pair (4 BNC) impedance test fixtures, rather than S-parameter test port.
Let me summerize tips for making better crystal measurements:
- To accurately measure the crystal impedance CI (= |Z| at the series resonant zero-phase point Fr ), it is necessary to have sufficient measurement points (sufficient freq resolution) around Fr and also the sweep speed arnoud Fr (+/-45 degree area) should not be very fast. Generally it is recommend to set the measurement span to a narrow range just covering the Fr area (without including the Fa area) and to set the IFBW to a narrow value like 100 Hz (to slow down the measurment speed).
- On the other hand, to perform the 4-element equivalent circuit analysis including C0, the measurement should be performed with a wider span including both series-resonant Fr and anti-resonant Fa areas because C0 is extracted from the measured data around Fa.
- If you use the leaded 50 ohm resistor to perform the open/short/load impedance cal on the 4TP fixture, selet the cal kit "leaded 50 ohm" whose definition includes an approximate residual inductance value of the leaded 50 ohm resistor.
- Crystal resonators generally have AC voltage level dependency, and you may want to know the voltage applied to the DUT.
In the gain-phase series-thru method, total impedance existing in series with the DUT is 100 ohm (source output-Z: 50 ohm + receiver T input-Z: 50 ohm). The source power level Vsrc (** mV @50ohm) indicated when pressing the power softkey means the AC voltage across the 50 ohm termination when the source port is terminated with it. So the open voltage is 2*Vsrc, and you can calculate the voltage applied to CI as Vci = (Vsrc*2)*CI/(CI+100).
The following seminar material (page-30) shows a crsytal resonator measurement example using the E5061B (in this example, not the gain-phase series-thru method but the reflection method):
http://cp.literature.agilent.com/litweb/pdf/5991-0213EN.pdf
Best regards,
Yasuhiro Mori / Agilent Technologies
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