嗨,Inoue san,
当你读或写NVSRAM时,你实际上在SRAM单元上执行操作,这样你就可以执行几乎无限的读/写操作。非易失性单元用于在断电或任何其他情况下存储数据。您可以在数据表中指定的非易失性单元中存储最少100万倍的数据。
谢谢,
普拉迪普塔
以上来自于百度翻译
以下为原文
Hi Inoue-san,
When you are reading or writing to nvSRAM you actually perform the operations on SRAM cells so you can perform practically infinite read/write operations. The non volatile cells are used to store the data during power down or any other situations. You can store data for 1 million times minimum in the non volatile cells as also specified in the datasheet.
Thanks,
Pradipta.
嗨,Inoue san,
当你读或写NVSRAM时,你实际上在SRAM单元上执行操作,这样你就可以执行几乎无限的读/写操作。非易失性单元用于在断电或任何其他情况下存储数据。您可以在数据表中指定的非易失性单元中存储最少100万倍的数据。
谢谢,
普拉迪普塔
以上来自于百度翻译
以下为原文
Hi Inoue-san,
When you are reading or writing to nvSRAM you actually perform the operations on SRAM cells so you can perform practically infinite read/write operations. The non volatile cells are used to store the data during power down or any other situations. You can store data for 1 million times minimum in the non volatile cells as also specified in the datasheet.
Thanks,
Pradipta.
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