请教C6747 16位nandflash烧写问题

我使用的是附件的程序，加载的gel文件，调试了一个星期仍没找到问题

对照一下手册看K9K2G16ABA是事满足下面所说的条件：
20.2.5.6.8 Interfacing to a Non-CE Don't Care NAND Flash
As explained in Section 20.2.5.6.4, the EMIFA does not support NAND Flash devices that require the chip
select signal to remain low during the tR time for a read. One way to work around this limitation is to use a
GPIO pin to drive the CE signal of the NAND Flash device. If this work around is implemented, software
will configure the selected GPIO to be low, then begin the NAND Flash operation, starting with the
command phase. Once the
                                                                         http://processors.wiki.ti.com/index.php/Main_Page
Think Over Before Asking.
http://www.catb.org/~esr/faqs/smart-questions.html#goal

您好，我看了数据手册，MT29F2G16 read page和program page 都是with CE# don't care，而且ID为0xCA在支持的列表中

终于找到问题的原因了，现在可以烧写程序了，总结一下，供参考
1、NAND_open()->ASYNC_MEM_Open()->DEVICE_AsyncMemInit()->DEVICE_pinmuxControl(15,0xFFFFFFFF,0x11888888);
将管脚设置为8位，注释掉函数中的所有管脚定义
2、(*hAsyncMemInfo->hDeviceInfo->fxnInit)(hAsyncMemInfo);
调用了DEVICE_ASYNC_MEM_Init()
ABCR[hAsyncMemInfo->chipSelectNum] = 0x3FFFFFFC | ((hAsyncMemInfo->busWidth == DEVICE_BUSWIDTH_8BIT)? 0 : 1);修改了寄存器CE3CFG的值，注释掉即可。

终于找到问题的原因了，现在可以烧写程序了，总结一下，供参考
1、NAND_open()->ASYNC_MEM_Open()->DEVICE_AsyncMemInit()->DEVICE_pinmuxControl(15,0xFFFFFFFF,0x11888888);
将管脚设置为8位，注释掉函数中的所有管脚定义
2、(*hAsyncMemInfo->hDeviceInfo->fxnInit)(hAsyncMemInfo);
调用了DEVICE_ASYNC_MEM_Init()
ABCR[hAsyncMemInfo->chipSelectNum] = 0x3FFFFFFC | ((hAsyncMemInfo->busWidth == DEVICE_BUSWIDTH_8BIT)? 0 : 1);修改了寄存器CE3CFG的值，注释掉即可。

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