参考文献
[1] Steve C Cripps, “RF Power Amplifier for Wireless Communication”, Norwood, MA, Artech House, 1999. [2] Frederick H. Raab, et al., “Power Amplifier and Transmitter for RF and Microwave”, IEEE Trans. Microwave Theory Tech., Vol. 50 pp. 814-826, March 2002 [3] D. Kimball, et al., “High Efficiency WCDMA Envelope Tracking Base-Station Amplifier Implemented with GaAs HVHBTs”, 2008 IEEE MTT-S Int. Microwave Symposium Digest. [4] I, Kim, et al., “Envelope Injection Consideration of High Power Hybrid EER Transmitter for IEEE 802.16 Mobile WiMAX Application”, 2008 IEEE MTT-S Int. Microwave Symposium Digest . [5] H. Deguchi, et al., “A 33W GaN HEMT Doherty Amplifier with 55% Drain Efficiency for 2.6GHz Base Stations”, 2010 IEEE MTT-S Int. Microwave Symposium Digest. [6] H. Sano, et al., “A 40W GaN HEMT Doherty Power Amplifier with 48% Efficiency for WiMAX Application”, 2007 IEEE Compound Semiconductor Integrated Circuit Symposium Digest. [7] N. Yoshimura, et al., “A 2.5-2.7GHz Broadband 40W GaN HEMT Doherty amplifier with higher than 45% drain efficiency for multi-band applications”, 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications.
作者:夏堬先生和Milos Jankovic 先生
TriQuint 半导体公司,500 W Renner Road, Richardson, TX , 75080, USA
参考文献
[1] Steve C Cripps, “RF Power Amplifier for Wireless Communication”, Norwood, MA, Artech House, 1999. [2] Frederick H. Raab, et al., “Power Amplifier and Transmitter for RF and Microwave”, IEEE Trans. Microwave Theory Tech., Vol. 50 pp. 814-826, March 2002 [3] D. Kimball, et al., “High Efficiency WCDMA Envelope Tracking Base-Station Amplifier Implemented with GaAs HVHBTs”, 2008 IEEE MTT-S Int. Microwave Symposium Digest. [4] I, Kim, et al., “Envelope Injection Consideration of High Power Hybrid EER Transmitter for IEEE 802.16 Mobile WiMAX Application”, 2008 IEEE MTT-S Int. Microwave Symposium Digest . [5] H. Deguchi, et al., “A 33W GaN HEMT Doherty Amplifier with 55% Drain Efficiency for 2.6GHz Base Stations”, 2010 IEEE MTT-S Int. Microwave Symposium Digest. [6] H. Sano, et al., “A 40W GaN HEMT Doherty Power Amplifier with 48% Efficiency for WiMAX Application”, 2007 IEEE Compound Semiconductor Integrated Circuit Symposium Digest. [7] N. Yoshimura, et al., “A 2.5-2.7GHz Broadband 40W GaN HEMT Doherty amplifier with higher than 45% drain efficiency for multi-band applications”, 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications.
作者:夏堬先生和Milos Jankovic 先生
TriQuint 半导体公司,500 W Renner Road, Richardson, TX , 75080, USA
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