参考文献
1. D. L. Blackburn, “Temperature measurements of semiconductor devices - a review,” 20th Annual IEEE Semi-Therm Symp., Mar 9-11, 2004, pp. 70-80
2. J. Wright, B.W. Marks, K. D. Decker, “Modeling of MMIC devices for determining MMIC channel temperatures during life tests,” in 7th IEEE Semiconductor Thermal Measurement, Modeling, and Management Symp., 1991, pp. 131–139.
3. D. S. Green, B. Vembu, D. Hepper, S. R. Gibb, D. Jin, R. Vetury, J. B. Shealy, L. T. Beechem, S. Graham, “GaN HEMT thermal behavior and implications for reliability testing and analysis,” Phys. Stat. Sol. C 5(6):2026-2029, 2008.
4. A. P. Fattorini, J. Tarazi, S. J. Mahon, “Channel Temperature Estimation in GaAs FET Devices,” IEEE MTT -S Intl. Microwave Symp., May 23-28, 2010, pp. 320-323.
5. J. C. Fiala, M. R. Overholt, S. Motakef, D. Carlson, “Thermal considerations in low cost T/R module design,” 35th GOMACTech Conf., Mar 22-25, 2010, Reno, NV.
6. S. R. Nedeljkovic, J. R. McMacken, P. J. Partyka, J. M. Gering, “A Custom III-V Heterojunction Bipolar Transistor Model,” Microwave Journal. Vol. 52, No. 4, April 2009, p. 60.
7. D. Denis, C. M. Snowden, I. C. Hunter, “Coupled Electrothermal, Electromagnetic, and Physical Modeling of Microwave Power FET s,” IEEE Trans. Microwave Theory Techniques, Vol. 54, No. 6, June 2006, pp. 2465-2470.
参考文献
1. D. L. Blackburn, “Temperature measurements of semiconductor devices - a review,” 20th Annual IEEE Semi-Therm Symp., Mar 9-11, 2004, pp. 70-80
2. J. Wright, B.W. Marks, K. D. Decker, “Modeling of MMIC devices for determining MMIC channel temperatures during life tests,” in 7th IEEE Semiconductor Thermal Measurement, Modeling, and Management Symp., 1991, pp. 131–139.
3. D. S. Green, B. Vembu, D. Hepper, S. R. Gibb, D. Jin, R. Vetury, J. B. Shealy, L. T. Beechem, S. Graham, “GaN HEMT thermal behavior and implications for reliability testing and analysis,” Phys. Stat. Sol. C 5(6):2026-2029, 2008.
4. A. P. Fattorini, J. Tarazi, S. J. Mahon, “Channel Temperature Estimation in GaAs FET Devices,” IEEE MTT -S Intl. Microwave Symp., May 23-28, 2010, pp. 320-323.
5. J. C. Fiala, M. R. Overholt, S. Motakef, D. Carlson, “Thermal considerations in low cost T/R module design,” 35th GOMACTech Conf., Mar 22-25, 2010, Reno, NV.
6. S. R. Nedeljkovic, J. R. McMacken, P. J. Partyka, J. M. Gering, “A Custom III-V Heterojunction Bipolar Transistor Model,” Microwave Journal. Vol. 52, No. 4, April 2009, p. 60.
7. D. Denis, C. M. Snowden, I. C. Hunter, “Coupled Electrothermal, Electromagnetic, and Physical Modeling of Microwave Power FET s,” IEEE Trans. Microwave Theory Techniques, Vol. 54, No. 6, June 2006, pp. 2465-2470.
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