PIC32MX530F128H NVM WritePage只有第一个128字节被写入一行

你好研究员，我困了，需要一些帮助与NVM程序闪存写页。我在论坛里发现了一些代码，我必须修改一下，以适应我的需要。现在模拟器里一切都很好。我可以擦除闪光灯页面并给它写。我必须写600字节。因此不止一行。据我所知，PIC32 MX中的行是512字节。我用最后两个程序Flash页面为我的用户闪存空间。我的用户Flash空间开始于0x9D01E000，结束于0x9D01FFFF。这应该是2×4096字节。我还保留了链接器脚本问题：当我写一行时，只有第一个128字节被写入一行。其余的行（80H-200小时）仍然是FFH。这是我使用的代码：MycPy（（空*）PaBufff，（空虚*）用户闪存，sieZof（PaBufff））；NVMyErasePoad（（空*）UsFlash页面）；……（NUBYTESLUT & GT；ByTeTyRoWig Simple）NyBestTestOrreTeToRoWo= BytEythRoWig大小；否则NuBestTestOWRITETROW= NuByTestLead；//从PaBufff写入512个字节（一个NVM行）。总是写一整行。//NvMyWrrrDeWORE（（空洞*）（UsFlash页面+ RoRunnIn PaulBufff），（空虚*）PaBufff）；/*原始*/Unt8Itt Res＝NVMyWrdReWORE（（空洞*）（UsFlash页面+ RoRunnIn PaulBufff），（空*）PaBuffff+RooRunnIn PaulBufff）；= 0）返回Res；NuByTestLeop-= NuByTestOWrrTeToRoW；RooRunnIn PosiWoReTeToRoW；}和未签名的int nvMyWrdReWORE（无效*地址，空隙*数据）{un签署int Res＝0；未签名int SaveDeSt.；SaveDeStase=d int）地址和0x1FFFFFF；NVMSRCADDR＝（（未签名int）数据和0x1FFFFFF）；RES＝NVMME解锁（NvMyOptuthOpRead Err.Read）；*一些帮助或提示将非常感谢。非常感谢，安德烈亚斯。



      以下为原文

    Hello Fellows,
Im stuck and need some help with NVM Program Flash write page. I found some code here in the forum, which I had to modify a little bit to suit my needs. Now in simulator everything works well. I can erase the flash page and write to it. I have to write 600bytes. Hence more than a row. According to my knowledge a row is 512 bytes in PIC32MX. I use the last two program flash pages for my user flash space. My user flash space starts at 0x9D01E000 and ends at 0x9D01FFFF. This should be 2*4096bytes. I also reserve that in the linker script

Problem: When I write a row only the first 128byte are written of a row. The rest of the row (80h-200h) remains all FFh.
Here is the code I use:

memcpy((void *)pageBuff, (void *)userFlashPage, sizeof(pageBuff));
NVM_ErasePage((void *)userFlashPage);
...
while (numBytesLeft)
   {
      if (numBytesLeft > BYTE_ROW_SIZE)
         numBytesToWriteToRow = BYTE_ROW_SIZE;
      else
         numBytesToWriteToRow = numBytesLeft;
      // Write 512 bytes (one NVM row) from pageBuff. Writes a whole row always.
      //NVM_WriteRow((void *)(userFlashPage + rowIndexInPageBuff), (void*)pageBuff); /* Original */
      uint8_t res = NVM_WriteRow((void *)(userFlashPage + rowIndexInPageBuff), (void*)pageBuff + rowIndexInPageBuff);
      if (res != 0)
          return res;
      numBytesLeft       -= numBytesToWriteToRow;
      rowIndexInPageBuff += numBytesToWriteToRow;
   }

and
unsigned int NVM_WriteRow (void* address, void* data)
{
    unsigned int res = 0;
    unsigned int saved_state;
    saved_state = __builtin_get_isr_state();
    __builtin_disable_interrupts();
   
    NVMADDR = ((unsigned int) address & 0x1FFFFFFF);
    NVMSRCADDR = ((unsigned int) data & 0x1FFFFFFF);
    res = NVM_Unlock(NVM_OPERATION_WRITE_ROW);
   
    __builtin_set_isr_state(saved_state);    /* Set back to what was before. */
    return res;
}

Some help or hints would be very appreciated. Thank you very much.
Andreas