那么,你是在HLVD中断时重置设备吗?按照数据表EEPROM读/写是在Vmin规格,在您的设备的情况下是4.2V。写EEPROM(再次按数据表)的时间是2MS典型。DS的第391页。如果需要进一步的帮助,请张贴你的全部代码和原理图。
以上来自于百度翻译
以下为原文
So, are you resetting the device upon a HLVD interrupt?
Per the datasheet EEPROM read/write is spec'd at Vmin which in the case of your device is 4.2V.
The time to write to EEPROM (again per the datasheet) is 2ms typical. Page 391 of DS.
Please post your entire code and schematics if you need further help.
那么,你是在HLVD中断时重置设备吗?按照数据表EEPROM读/写是在Vmin规格,在您的设备的情况下是4.2V。写EEPROM(再次按数据表)的时间是2MS典型。DS的第391页。如果需要进一步的帮助,请张贴你的全部代码和原理图。
以上来自于百度翻译
以下为原文
So, are you resetting the device upon a HLVD interrupt?
Per the datasheet EEPROM read/write is spec'd at Vmin which in the case of your device is 4.2V.
The time to write to EEPROM (again per the datasheet) is 2ms typical. Page 391 of DS.
Please post your entire code and schematics if you need further help.
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