查看芯片手册MT29F8G08ABABAWP所代表的具体参数如下：

Open NAND Flash Interface (ONFI) 2.1-compliant 1

• Single-level cell (SLC) technology

• Organization

– Page size x8: 4320 bytes (4096 + 224 bytes)

– Block size: 128 pages (512K +28 K bytes)

– Plane size: 2 planes x 1024 blocks per plane

– Device size: 8Gb: 2048 blocks

• Synchronous I/O performance。

– Up to synchronous timing mode 4

– Clock rate: 12ns (DDR)

– Read/write throughput per pin: 166 MT/s

• Asynchronous I/O performance

– Up to asynchronous timing mode 4

–

t RC/ t WC: 25ns (MIN)

• Array performance

– Read page: 25µs (MAX)

– Program page: 230µs (TYP)

– Erase block: 700µs (TYP)

• Operating Voltage Range

– V

CC : 2.7–3.6V

– V

CCQ : 1.7–1.95V, 2.7–3.6V

• Command set: ONFI NAND Flash Protocol

• Advanced Command Set

– Program cache

– Read cache sequential

– Read cache random

– One-time programmable (OTP) mode

– Multi-plane commands

– Multi-LUN operations

– Read unique ID

– Copyback

• First block (block address 00h) is valid when ship-

ped from factory. For minimum required ECC, see

Error Management (page 93).

• RESET (FFh) required as first command after power-

on

• Operation status byte provides software method for

detecting

– Operation completion

– Pass/fail condition

– Write-protect status

• Data strobe (DQS) signals provide a hardware meth-

od for synchronizing data DQ in the synchronous

interface

• Copyback operations supported within the plane

from which data is read

• Quality and reliability

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating temperature:

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package

– 48-pin TSOP

– 100-ball BGA

整理一下信息：Nand Flash , 容1GByte(8G/8bit) , 是用SLC存储(Single Level Cell单层存储) , 总线为8bit , 工作电压为2.7V~3.6V , 第2版本。

2.存储原理

打开MT29F8G08ABABAWP芯片手册的P1页

由芯片手册上可知，这款NAND FLASH，页大4K，块大小512K，意思就是读写操作，每次最小为4K，擦除操作每次最小为512K。什么原理呢，继续向下看。