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关于锗的SILVACO仿真程序
为什我将下面的硅换成锗之后,程序就一直停留在solve vdrain=0.05,只有将其值改为0,并将后一句删除才会有输出,但输出并不好。求一个关于锗的SILVACO仿真程序 go atlas tiTLE SOI device simulation # SILVACO International 1992, 1993, 1994, 1995, 1996 # # 0.2um of silicon on 0.4um oxide substrate # mesh space.mult=1.0 # x.mesh loc=0.00 spac=0.50 x.mesh loc=1.15 spac=0.02 x.mesh loc=1.5 spac=0.1 x.mesh loc=1.85 spac=0.02 x.mesh loc=3 spac=0.5 # y.mesh loc=-0.017 spac=0.02 y.mesh loc=0.00 spac=0.005 y.mesh loc=0.1 spac=0.02 y.mesh loc=0.2 spac=0.01 y.mesh loc=0.6 spac=0.25 # region num=1 y.max=0 oxide region num=2 y.min=0 y.max=0.2 silicon region num=3 y.min=0.2 oxide # #*********** define the electrodes ************ # #1-GATE #2-SOURCE #3-DRAIN #4-SUBSTRATE(below oxide) # electrode name=gate x.min=1 x.max=2 y.min=-0.017 y.max=-0.017 electrode name=source x.max=0.5 y.min=0 y.max=0 electrode name=drain x.min=2.5 y.min=0 y.max=0 electrode substrate # #*********** define the doping concentrations ***** # doping uniform conc=2e17 p.type reg=2 doping gauss n.type conc=1e20 char=0.2 lat.char=0.05 reg=2 x.r=1.0 doping gauss n.type conc=1e20 char=0.2 lat.char=0.05 reg=2 x.l=2.0 save outf=soiex01_0.str tonyplot soiex01_0.str -set soiex01_0.set # # set interface charge separately on front and back oxide interfaces interf qf=3e10 y.max=0.1 interf qf=1e11 y.min=0.1 # # set workfunction of gate contact name=gate n.poly # # select models models conmob srh auger bgn fldmob print # solve init # # do IDVG characteristic # method newton trap solve prev solve vgate=-0.2 solve vdrain=0.05 solve vdrain=0.1 # # ramp gate voltage log outf=soiex01_1.log master solve vgate=0.1 vstep=0.1 name=gate vfinal=1.5 # # plot resultant IDVG threshold voltage curve tonyplot soiex01_1.log -set soiex01_1.set # # plot resultant IDVG subthreshold slope curve tonyplot soiex01_1.log -set soiex01_2.set # # extract name="subvt" 1.0/slope(maxslope(curve(v."gate",log10(abs(i."drain"))))) # # extract name="vt" (xintercept(maxslope(curve(v."gate",abs(i."drain")))) - abs(ave(v."drain"))/2.0) # quit |
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