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[问答] 配置L6482板很热
752 L6482 寄存器 SPI
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我使用L6482芯片设计了一块电路板。

我的L6482已经启动了,我可以通过SPI总线发送和接收消息,但现在我遇到了一个问题:

我的状态寄存器说:
(获取状态命令= 0xE003)。
它的意思是:

OCD
= 1 - >过流

= 1 - >停止
HIZ
= 1 - >高阻抗状态下的桥梁。

出现问题
甚至
没有连接
步进电机
...!
只需打开电源,我的L6482就会很热,但我测量了电路板的总电流,而且只有0.1安培。



我已经阅读了AN4354和UM1685应用笔记和用户手册,以便计算我的电路板的配置值:

OCD_TH = 1000mV

TCC = 1200nSg

IGATE = 64 mA
TBLANK = 500 nSg
TDT = 250 nSg

我使用3.3v外部电源:VCCREG,VREG和VDDIO连接到这个3.3v外部电源。
我使用VSREG和内部调节器来获得VCC = 15v。 VCC引脚未连接。

我正在使用与ST Microelectronics制造商的D2PAK封装的Mosfets。
我的Rsense =200mΩ
,它的价值太高了吗?

所以我认为问题可能是:

配置寄存器中的值不正确。 (AN 4354,第2.4章:栅极电荷过低,无法完成米勒高原地区......?)

连接不良:Vs,VSreg,Vccreg,Vcc,Vdd等......
有人能把这里正确的联系?
和配置值?

提前致谢,

以上来自于谷歌翻译


以下为原文




I have designed a board using a L6482 chip.

My L6482 has started, and I can send and receive messages a través de SPI bus, but now I have a problem:

My STATUS register says:
  (Get Status Command = 0xE003).
It means:

OCD
= 1  --> overcurrent
BUSY
= 1  --> Stopped
Hiz
= 1  --> Bridges in High Impedance State.


The problem occurs
even
without connecting the
stepper motor.
...!
Just turn on the power, and my L6482 gets quite hot, but I have measured the total current of the board, and it is only 0.1 Amp.  




I have read AN4354 and UM1685 Application note and User Manual, in order to calculate config values of my board:

OCD_TH = 1000mV

TCC = 1200 nSg

IGATE = 64 mA
TBLANK = 500 nSg
TDT = 250 nSg

I use 3.3v external power supply: VCCREG, VREG and VDDIO are connected to this 3.3v external power supply.  
I use VSREG and internal regulator for obtaining VCC=15v. VCC pin is unconnected.

I am using Mosfets with D2PAK package, of ST Microelectronics manufacturer.
My Rsense = 200mΩ
, is it a too high value?  

So I think the problem could be:


  • Bad values in registers of configuration. (AN 4354, chapter 2.4: Too low gate charge to complete the Miller plateau region...?)
  • Bad connections of: Vs, VSreg, Vccreg, Vcc, Vdd, etc.......
Could anybody put here the right connections?
And the configuration values?

Thanks in advance,
0
2018-10-24 11:17:44   评论 分享淘帖 邀请回答

相关问题

25个回答
下面解释我如何为GATECFG1和GATECFG2寄存器计算我的配置值:
 
 
 从数据表第3页开始:
总栅极电荷Qg = 75nC
 
 
 如果我选择门电流= 64mA

75 10 ^ -9 = TCC * 64 10 ^ -3
 
 然后:
TCC = 1.17 uSg - > 1200 nSg
 
 
 考虑到UM1685用户手册,第3.3章:
TBLANK = 500 nSg
 
 TDT = 250 nSg
 
 来自STB75NF75L数据表:
VCC = 15v
 
 UVLO = 11v
 
此外,
另一方面

 我的
 它的价值太高了吗?
 阅读UM1685用户手册第4章,等式5,如果我想使用I motor max = 5 Amp,
 
一世
通过
 R sense = 0.5 * I motor max = 2.5 Amp
 R sense = 0.2v / 2.5 =80mΩ
 
 我应该为Rsense =80mΩ更改它们
 对于0.1伏参考峰值。

以上来自于谷歌翻译


以下为原文




Below explain how I have calculated  my config values, for GATECFG1 and GATECFG2 registers:


From page 3 of data sheet:
Total Gate Charge Qg = 75 nC


If I choose gate current = 64mA
:
75 10^-9 = TCC * 64 10^-3

then:
TCC = 1.17 uSg --> 1200 nSg


And from considerations of UM1685 User Manual, chapter 3.3:
TBLANK = 500 nSg

TDT = 250 nSg

From STB75NF75L data sheet:
VCC = 15v

UVLO = 11v

Moreover,

on the other hand
:
My
¿is it a too high value?  
Reading UM1685 User Manual chapter 4, equation 5, if I want to use I motor max = 5 Amp,  

I
through
R sense = 0.5 * I motor max = 2.5 Amp
R sense = 0.2v/2.5 = 80 mΩ

I should change them for Rsense = 80mΩ
for a peak of 0.1 volts of reference.
2018-10-24 11:25:46 评论

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这些是我的观点:
 
 
 OCD_TH = 1000 mV
 
 
 GATECFG1(TCC = 1200,Igate = 64mA)
 
 
 GATECFG2(TBLANK = 500,TDT = 250)
 
 
 
 配置:16MHZ,EN_TQREG_INT_REG,OC_SD_ENABLE,VCCVAL15,TSW_44_us
 
 
 
 ALARM:OVERCURRENT,THERMAL_SHUTDOWN,THERMAL_WARNING,UNDER_VOLTAGE,SW_TURN_ON,WRONG_NPERF_CMD
 
 
 获取状态命令= 0xE003

以上来自于谷歌翻译


以下为原文





These are my sttings:


OCD_TH = 1000 mV


GATECFG1 (TCC=1200, Igate=64mA)


GATECFG2 (TBLANK=500, TDT=250)



CONFIG: 16MHZ, EN_TQREG_INT_REG, OC_SD_ENABLE, VCCVAL15, TSW_44_us



ALARM:  OVERCURRENT, THERMAL_SHUTDOWN, THERMAL_WARNING, UNDER_VOLTAGE, SW_TURN_ON, WRONG_NPERF_CMD


Get Status Command = 0xE003
2018-10-24 11:36:03 评论

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嗨,
 
 
 某些MOSFET可能已损坏。 STB75NF75L的最大栅极电压为15 V,因此驱动它将VCC设置为15 V可能会很危险。
 检查是某些MOSFET的栅极与源短路,更换损坏的MOSFET并将VCC设置为7.5 V.
 
 关于检测电阻:大小取决于应用的目标电流和检测电阻(或电阻)的最大功耗。通常,您应该使用0.2 V的参考电压,以获得良好的电流控制。
 在您的情况下,如果您想以2.5 Arms电流(约3.5 A峰值)驱动电机,则应使用85-57 mOhm(0.2 V - 0.3 V峰值参考电压)范围内的检测电阻。在这种情况下,检测电阻的功耗约为1 W.
 
 原理图有问题。 VCC引脚上的旁路电容缺失,与VS,VREG和VDDIO一样。
 我还建议你在每个全桥的电源上加一个小电容(220 nF)。这有助于减少换向引起的电噪声。
 
 问候
 恩里科

以上来自于谷歌翻译


以下为原文





Hi,


It is possible that some of the MOSFET are damaged. The maximum gate voltage of the STB75NF75L is 15 V, so driving it setting the VCC to 15 V could be dangerous.
Check is the gate of some of the MOSFETs is shorted to the source, replace the damaged MOSFETs and set the VCC to 7.5 V.

About the sense resistor: the size depends on the target current of your application AND the maximum power dissipation of the sense resistor (or resistors). In general you should work with a reference voltage of 0.2 V in order to obtain a good current control.
In your case, if you want to drive your motor with a 2.5 Arms current (about 3.5 A peak) you should use a sense resistor in the range of 85-57 mOhm (0.2 V - 0.3 V of peak reference voltage). In this case the power dissipation on the sense resistor will be about 1 W.

The schematic has something wrong. The bypass capacitor on the VCC pin is missing as like as the VS, VREG and VDDIO ones.
I also suggest you to add a small capacitor (220 nF) on the supply of each full bridge. This helps reducing the electrical noise caused by commutations.

Regards
Enrico
2018-10-24 11:46:15 评论

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你好,
 
 我检查了我的Mosfet,他们没事。是否还有其他参数可用于检查Mosfet模型是否适用于此控制器?是否有适合的Mosfet(这种尺寸)和其他合适的?这款Mosfet型号对L6482控制器来说太大了吗?
 
 当我连接电路板时,L6482说:
OCD
= 1 - >过流

= 1 - >停止
HIZ
= 1 - >高阻抗状态下的桥梁。
 芯片的温度会增长并增长,然后断开连接。当温度下降到足够时,它会再次启动,并且一次又一次地重复该过程。
 
 我正在考虑安装一个新的和干净的PCB,以便再次验证连接...
 
 非常感谢您对该计划的建议。

以上来自于谷歌翻译


以下为原文




Hello,

I have checked my Mosfet, and they are fine. Is there any other parameter for checking if a model of Mosfet is valid for using with this controller? Are there Mosfet (of this size) which are not suitable and other suitable? Is this model of Mosfet too big for L6482 controller?

when I connect the board, L6482 says:  
OCD
= 1  --> overcurrent
BUSY
= 1  --> Stopped
Hiz
= 1  --> Bridges in High Impedance State.
Temperature of the chip grows and grows, and then it disconnects. When temperature go down enough, it starts again, and the process is repeated again and again.

I am thinking in mounting a new and clean PCB, in order to verify connections again...

Thank you so much for your suggestions about the scheme.
2018-10-24 11:56:50 评论

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我制造了一个新的pcb板,现在是一个非常小的电机-0.25 Nm-运行,有一些标志激活等,但它转,所以我认为板是好的(我已经从ST示例复制它)。
 
 
 但当我连接1 Nm步进电机时:
 
 在Move命令之前:
 状态:0x00002203(精)
 
 移动命令:电机尝试启动,但突然停止。
 
 移动命令后:
 状态:0x00002003(UVLO标志低)
 
 这个错误的原因是什么?
 
 我的感觉是0.05欧姆。也许太低了?
 我的电源足够强大,24v 3.2安培。
 
 提前致谢,

以上来自于谷歌翻译


以下为原文




I have manufactured a new pcb board, and now a very small motor -0.25 Nm- runs, with some flags activation, etc. but it turns, so I think board is ok (I have copied it from ST example).


but when I connect a 1 Nm stepper motor:

Before Move command:
Status: 0x00002203 (Fine)

Move Command: Motor try to start, but suddenly it stops.

After Move command:
Status: 0x00002003  (UVLO flag low)

What could be the reason of this error?

My R sense is 0.05 ohms. Too low, perhaps?
My power supply is strong enough, 24v 3.2 Amp.

Thanks in advance,
2018-10-24 12:07:54 评论

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嗨,在这种情况下你的配置是什么?它是否与之前的主板相同?关心恩里科

以上来自于谷歌翻译


以下为原文





Hi,


What is your configuartion in this case? Is it the same of the previous board?

Regards
Enrico
2018-10-24 12:17:45 评论

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是的,我使用相同的Mosfets配置,参数等。
 
 在PCB板中,我还添加了一个可选的ADCIN电压基准,用于从ST示例复制的转矩调节。
 
 几次,1牛顿马达启动,但即使在这种情况下,它运行不好,它的运动不干净。

以上来自于谷歌翻译


以下为原文





Yes, I use the same configuration of Mosfets, parameters, etc.

In PCB board, I have also added an optional ADCIN voltage reference, for Torque regulation, copied from ST example, as well.

Some few times, 1 Nm motor starts, but even in this case, it runs bad, its movement is not clean.
2018-10-24 12:28:19 评论

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文件UM1685(EVAL6482H手册)
,第28页,说:
 
 
 
 
注意:当使用7.5 V的VCC电压时,应使用低压电池替换电荷泵二极管(建议部件BAR43SFILM)。
否则,所产生的启动电压可能低于相应的UVLO阈值,并且设备不起作用。
 
 
 
 我使用VCC = 7.5v,和
BAV99
 双二极管(不是特定的低压降),所以:
 
 可能是这个问题,我的问题?

以上来自于谷歌翻译


以下为原文






Document UM1685 (manual of  EVAL6482H)
, pg 28, says:




Note: When the VCC voltage of 7.5 V is used, the charge pump diodes should be replaced with low-drop ones (suggested part BAR43SFILM).

Otherwise the resulting boot voltage couldbe lower than the respective UVLO threshold and the device is not operative.




I am using VCC = 7.5v, and
BAV99
double diodes (not specific low drop), so:  
  
Could be this issue, my problem?
2018-10-24 12:44:41 评论

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可能。如果不更换二极管,电荷泵电路的压降可能会触发UVLO保护。恩里科

以上来自于谷歌翻译


以下为原文





Could be. If you do not repleace the diodes the drop of the charge pump circuitry can triggers the UVLO protection.


Enrico
2018-10-24 12:52:25 评论

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我放了BAR43SFILM二极管,之后我正在检查电压。
 
 
 在VS = 24v时,我用Fluke万用表测试了它们:
 
 
VCCREG = 7,59v
 
 VREG = 3,23v
 
 
VCCREG = 6,86 - 6,97v
 (太低,它处于UVLO报警的极限)
VREG = 4,62v
 (太高了,应该是3,3v ......)
 
 我看到在我的电路板上VCCREG处于UVLO报警极限,VREG太高,但我不明白是什么原因,因为它们是内部监管机构......

以上来自于谷歌翻译


以下为原文




I have put BAR43SFILM diodes, and afterwards I was checking voltages.


With VS = 24v, I have tested them with a Fluke multimeter :




VCCREG = 7,59v

VREG = 3,23v



VCCREG = 6,86 -- 6,97v
(too low, it is in the limit of UVLO alarm)
VREG = 4,62v
         (too high, it should be 3,3v.....)

I see that in my board VCCREG is in the limit of UVLO alarm, and VREG is too high, but I do not understand what coud be the reason, because they are internal regulators...
2018-10-24 13:02:34 评论

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我想在安装8个Mosfets之前用板测试VREG和VCCREG,以便更多地了解这些奇怪的电压值。
 
 
 有可能,还是L6482微控制器可能会损坏?

以上来自于谷歌翻译


以下为原文





I am thinking in testing VREG and VCCREG with a board before mounting their 8 Mosfets, in order to know more about so strange values of voltages.


Is it possible, or L6482 microcontroller could be damaged?
2018-10-24 13:17:43 评论

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我也买了
STB80NF10T4
(D2PAK)
 金属氧化物场效应晶体管。就这样,此刻,我有两块板:
 
采用STB75NF75L(D2PAK)的电路板
 Mosfets和Vccreg = 7,5vBoard with
STB80NF10T4
 (D2PAK)
 Mosfets和Vccreg = 15v都带有BAR43SFILM
 低压二极管。
 
 我测试了它们,并获得了相同的结果。
 
 在这个项目中,我使用的是比EVAL6482H示例板更大的Mosfets。所以,我的问题是:
 
 
 在其他情况下,
 
 
 比较STD25NF10T4的“总栅极电荷”的典型值
 是55 nC,10 Vgs = 10V,而STB75NF75L
 需要75 nC和Vgs = 5V
,和STB80NF10T4
 需要135 nC a Vgs = 10V。
 
 
 我问的是,因为我总是发现有关OVERCURRENT,THERMAL_WARNING,THERMAL_SHUTDOWN ......的问题......

以上来自于谷歌翻译


以下为原文






I have also bought
STB80NF10T4
(D2PAK)
Mosfets. That way, at this moment, I have two boards:



  • Board with STB75NF75L   (D2PAK)
    Mosfets, and Vccreg= 7,5v
  • Board with

    STB80NF10T4
    (D2PAK)
    Mosfets, and Vccreg= 15v
Both with BAR43SFILM
low drop diodes.

I have tested them, and obtained the same results.

In this project I am using bigger Mosfets than in EVAL6482H example board. so, my question is:







In other case,









Comparing, typical values of ''Total Gate Charge'' for STD25NF10T4
is 55 nC with 10 Vgs = 10V, whilst STB75NF75L
needs 75 nC and Vgs = 5V
, and STB80NF10T4
needs 135 nC a Vgs = 10V.

  
I am asking about it, because I always found problems about  OVERCURRENT, THERMAL_WARNING, THERMAL_SHUTDOWN......
2018-10-24 13:37:41 评论

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我有一些像ramirez_prieto.valen这样的问题。我无法运行L6482。通讯很好(在测试仪上检查)。我将所有参数读回uC,数字相同。但我仍然无法为电机0,5安培,1.5安培,3安培运行RUN AT SPEED命令 - 没什么。状态始终为0xE003。 L6482没有设置一个MOSFET门脉冲,但仍然声称OCD。我假设驱动器将产生至少一个门脉冲,之后它可以声称OCD。这是真的吗?

以上来自于谷歌翻译


以下为原文





I have the some problems like ramirez_prieto.valen. I was not able to run L6482. The communication is good (checked on osciloscope). I read all of parameter back to uC and the numbers are the same. But I am still not able to does RUN AT SPEED command for motors 0,5 Amps, 1,5 Amps, 3 Amps - Nothing. Status is all of time 0xE003. The L6482 didn't set just one MOSFET Gate pulse but still claim OCD. I presumed that the driver will generate at least one Gate pulse and after that it can claimed the OCD. Is it true?
2018-10-24 13:56:57 评论

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VCCREG = 6,86 - 6,97v
 
VREG = 4,62v
 
 
我已经忘记了
 放冷凝器
CVREG =22μF的
 
 
 现在所有电压都与EVAL6482H电路板上检查的电压完全相等。
 
 
 当我考虑VREG稳定时,我检查了ST的不同文档(应用笔记,板卡手册等),所有这些都给出了不同的解决方案:
 
 VREG使用两个冷凝器:22uF和100nF
 VDD使用一个电容器:100nF
 
 
 VREG使用两个冷凝器:47uF和100nF
 VDD使用两个电容器:10uF和100nF
 
 
 VREG使用一个冷凝器:220nF
 VDD使用一个电容器:100nF
 
 或者至少

以上来自于谷歌翻译


以下为原文






</b>
</b>
:</b>





VCCREG = 6,86 -- 6,97v

VREG = 4,62v
         


I had forgotten
to put the condenser
CVREG=22uF


Now all voltages are exactly equals to voltages checked on the EVAL6482H board.


When I was thinking about VREG stabilization, I checked differents documents of ST (Application Notes, Manuals of Boards, etc), and all of them give different solutions :


VREG uses two condensers: 22uF and 100nF
VDD uses one condenser: 100nF


VREG uses two condensers: 47uF and 100nF
VDD   uses two condensers:  10uF and 100nF


VREG uses one condenser: 220nF
VDD uses one condenser: 100nF

or at least
2018-10-24 14:14:51 评论

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之后,我安装了两块板,用于比较它们的行为:
 
 一块板子
STD25NF10T4
 Mosfets,Vg = 15v,(DPAK),.一块板
STB80NF10T4 Mosfets
,Vg = 15v,(D2PAK,更大的mosfet)。我做了几次测试,并且:
 
 相当于EVAL6482H的电路板在连接1Nm电机的情况下运行。
 (BSY标志

 成功激活
,电机运行,FLG未激活)。
 (Led yellow On,Led Red Off)
 
 板载STB80NF10T4 Mosfets
 没有连接电机时运行正常。
 (BSY标志

 成功激活
,FLG未激活,Led yellow On,Led Red Off)。
 
 但是当我连接PaP电机并发送移动命令时,FLG信号被激活。
 (Led yellow Off,Led Red On)
 然后GetStatus()返回此错误:0x00000603
 
 但没有理由发生这种情况。发生什么事?

以上来自于谷歌翻译


以下为原文




Afterwards, I have mounted two boards, for comparing their behaviors:



  • One board with
    STD25NF10T4
    Mosfets, Vg=15v, (DPAK), .
  • One board with
    STB80NF10T4 Mosfets
    , Vg=15v, (D2PAK, a bigger mosfet).
I have made several tests, and:

Board equivalent to EVAL6482H runs with 1Nm motor connected.
(BSY flag
is
successfully activated
, motor runs, and FLG is not activated).
(Led yellow On, Led Red Off)

Board with STB80NF10T4 Mosfets
runs fine when there is not any motor connected.
(BSY flag
is
successfully activated
, and FLG is not activated, Led yellow On, Led Red Off).

But when I connect a PaP motor and I send a Move command, FLG signal is activated.
(Led yellow Off, Led Red On)  
Then GetStatus() returns this Error: 0x00000603


but there is no reason for this happen. What is happening?
2018-10-24 14:23:35 评论

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我用过
 
VREG使用两个冷凝器:22uF和100nF
VDD使用一个电容器:100nF
喜欢吃的
我测量了
VCCREG = 7,52 V.
 
VREG = 3,30 V.

以上来自于谷歌翻译


以下为原文





I have used

VREG uses two condensers: 22uF and 100nF
VDD uses one condenser: 100nF
like is meaned in
and I measured  
VCCREG = 7,52 V
  
VREG = 3,30 V
2018-10-24 14:29:18 评论

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如图所示,
测试
 环境
 非常简单:两块STM32F4 DISCOVERY板,连接到这块PCB板。但是,结果完全不同。
..
 
 我再次向ST提出同样的问题:
 
 
 
 也许我应该停止尝试控制这些MOSFET,并使用这些较小的STD25NF10T4 Mostfet ....

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As is shown in this image, the

test
environment
is very simple: Two STM32F4 DISCOVERY boards, connected to this PCB boards. However, the results are totally different.
..  

I ask to ST the same question once again:  









Maybe I should stop trying to control these MOSFET, and use these smaller STD25NF10T4  Mostfet....
2018-10-24 14:37:56 评论

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你能在两块板子上张贴你的司机号码吗?
 
我有7B262 L6482 V5 PHL 11220
它可能是不同的硅版本和那里的任何错误,但在勘误表中没什么。

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Can you please post your drivers number on both boards?

I have 7B262 L6482 V5 PHL 11220
It could be the different silicon version and any bug there, but in errata is nothing.
2018-10-24 14:43:13 评论

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我的董事会
 STB80NF10T4 Mosfets,Vg = 15v,(D2PAK,更大的mosfet)。
 
 我开始运行,当我修改了下一个参数,并且我已经设置了非常低的值。
 
 CSPIN_SetParam(CSPIN_TVAL_HOLD,0x08);
 CSPIN_SetParam(CSPIN_TVAL_RUN,0x05);
 CSPIN_SetParam(CSPIN_TVAL_ACC,0x05);
 CSPIN_SetParam(CSPIN_TVAL_DEC,0x05);
 
 在船上:
 STB75NF75L(D2PAK)Mosfets和Vccreg = 7,5v
 我已经将栅极电流减小到64mA到32mA并且TCC值更长,然后电路板开始工作,
 
 运动并不完美,有时候运动的测试保证会突然和意外地停止。

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My board with
STB80NF10T4 Mosfets, Vg=15v, (D2PAK, a bigger mosfet).

started to run, when I have modified the next parameters, and I have put very low values.

     CSPIN_SetParam(CSPIN_TVAL_HOLD, 0x08);
      CSPIN_SetParam(CSPIN_TVAL_RUN, 0x05);     
     CSPIN_SetParam(CSPIN_TVAL_ACC, 0x05);     
     CSPIN_SetParam(CSPIN_TVAL_DEC, 0x05);

In board with:
STB75NF75L   (D2PAK) Mosfets, and Vccreg= 7,5v
I have reduced gate current = 64mA to 32mA and a longer TCC value, and then board started to work,

Movement is not perfect and some times the test secuence of movements stops suddenly and unexpectedly.
2018-10-24 14:48:43 评论

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